zhpsЖурнал прикладной спектроскопииZhurnal Prikladnoii Spektroskopii0514-7506B. I. Stepanov Institute of Physics of the National Academy of Scienceszhps-1014Research ArticleАННОТАЦИИ АНГЛОЯЗЫЧНЫХ СТАТЕЙABSTRACTS ENGLISH-LANGUAGE ARTICLESСтруктурные, оптические и фотолюминесцентные исследования нанопорошков ZnO, легированных титаном методом простого растворенияStructural, Optical, and Photoluminescence Studies of Ti-Doped ZnO Nanopowders by a Simple Solution MethodKumarM. S.KumarM. S.

Виджаявада

 Vijayawada 

RavikumarR. V. S. S. N.RavikumarR. V. S. S. N.

Нагарджуна Нагар, Гунтур 

Nagarjuna Nagar, Guntur

RaoM. С.RaoM. C.

Виджаявада

 Vijayawada 

raomc72@gmail.comКолледж Андхра ЛойолаDepartment of Physics, Andhra Loyola CollegeУниверситет Ачарьи НагарджуныDepartment of Physics, Acharya Nagarjuna University202224032022892284284Copyright © Kumar M.S., Ravikumar R.V., Rao M.С., 20222022Kumar M.S., Ravikumar R.V., Rao M.С.Kumar M.S., Ravikumar R.V., Rao M.C.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://zhps.ejournal.by/jour/article/view/1014

Исследованы структурные и спектроскопические свойства образцов нанопорошков ZnO, легированных различной концентрацией титана с использованием простой методики растворения. Согласно рентгенограмме, размер кристаллитов нанопорошка ZnO 41.67 нм. За счет увеличения концентрации примеси в решетке-хозяине размер кристаллитов уменьшается до 20.84 нм. Морфология поверхности указывает на то, что легирование Ti незначительно влияет на формирование ZnO. Методом УФ-видимой спектроскопии определены оптические свойства образцов и проведена идентификация структурных групп. Спектр фотолюминесценции указывает на то, что группы люминесцируют в УФ и красной областях. В спектре ЭПР наблюдается сигнал реверберации при g = 1.35. Различие в значениях намагниченности в диапазоне от 0.04 до 0.02 составляет 1.092 emu/g, что свидетельствует о равномерном внедрении Ti в ZnO.

A titanium-doped ZnO nanopowder was prepared with different wt% ratios using a simple solution technique. Structural and spectroscopic characterization was done for the prepared samples. The X-ray powder diffraction pattern showed that the prepared nanopowder was in the nanoscale range, the crystallite size of the ZnO nanopowder being 41.67 nm. By increasing the dopant concentration in the host lattice, the crystalline size was decreased to 20.84 nm. The morphological surface stated that the formatting of ZnO was marginally impacted by Ti-doping. The optical properties and identification of assimilation groups were determined by UV-Vis spectroscopy. The photoluminescence spectrum indicated that the outflow groups were in the UV and red regions. Electron paramagnetic resonance displayed a reverberation signal at g = 1.35. The distinction in the magnetization values within the range from 0.04 to 0.02 was 1.092 emu/g, demonstrating an even expansion of Ti in ZnO.

ZnOлегированный Tiрентгеновская дифракциясканирующий электронный микроскопфотолюминесценциямагнитные свойстваTi-doped ZnOX-ray diffractionscanning electron microscopephotoluminescencemagnetic propertiesReferencesS. A. Bidier, M. R. Hashim, IEEE 6th Int. Conf. on Photonics (2016).S. A. Bidier, M. R. Hashim, IEEE 6th Int. Conf. on Photonics (2016).S. A. Bidier, M. R. Hashim, Ahmad M. Al-Diabat, M. Bououdina, Phys. E, 88, 169–171 (2017).S. A. Bidier, M. R. Hashim, Ahmad M. Al-Diabat, M. Bououdina, Phys. E, 88, 169–171 (2017).R. K. Chava, M. Kang, J. Alloys Compd., 692, 67–76 (2017).R. K. Chava, M. Kang, J. Alloys Compd., 692, 67–76 (2017).Cheng-Liang Hsu, Yi-Dian Gao, You-Syuan Chen, Ting-Jen Hsueh, Sens. Act. B, 192, 550–557 (2014).Cheng-Liang Hsu, Yi-Dian Gao, You-Syuan Chen, Ting-Jen Hsueh, Sens. Act. B, 192, 550–557 (2014).R. Sridhar, C. Manoharan, S. Ramalingam, S. Dhanapandian, M. Bououdina, Spectrochim. Acta A, 120, 297–303 (2014).R. Sridhar, C. Manoharan, S. Ramalingam, S. Dhanapandian, M. Bououdina, Spectrochim. Acta A, 120, 297–303 (2014).S. A. Bidier, M. R. Hashim, M. Bououdina. J. Mater. Sci: Mater. Electron., 28, 11178–11185 (2017).S. A. Bidier, M. R. Hashim, M. Bououdina. J. Mater. Sci: Mater. Electron., 28, 11178–11185 (2017).Zhihua Yong, Tao Liu, Tomoya Uruga, Hajime Tanida, Dongchen Qi, Andrivo Rusydi, Andrew T. S. Wee, Mater., 3, No. 6, 3642–3653 (2010).Zhihua Yong, Tao Liu, Tomoya Uruga, Hajime Tanida, Dongchen Qi, Andrivo Rusydi, Andrew T. S. Wee, Mater., 3, No. 6, 3642–3653 (2010).Liang-Wen Ji, Shi-Ming Peng, Jun-Sheng Wu, Wei-Shun Shih, Cheng-Zhi Wu, I. Tseng Tang, J. Phys. Chem. Solids, 70, No. 10, 1359–1362 (2009).Liang-Wen Ji, Shi-Ming Peng, Jun-Sheng Wu, Wei-Shun Shih, Cheng-Zhi Wu, I. Tseng Tang, J. Phys. Chem. Solids, 70, No. 10, 1359–1362 (2009).R. Nandi, S. S. Major, Appl. Surf. Sci., 399, 305–312 (2017).R. Nandi, S. S. Major, Appl. Surf. Sci., 399, 305–312 (2017).W. Yu, T. Liu, S. Cao, C. Wang, C. Chen, J. Solid State Chem., 239, 131–138 (2016).W. Yu, T. Liu, S. Cao, C. Wang, C. Chen, J. Solid State Chem., 239, 131–138 (2016).Y. Liu, W. Gao, J. Alloys Compd., 629, 84–91 (2015).Y. Liu, W. Gao, J. Alloys Compd., 629, 84–91 (2015).Y. Kumar, A. K. Rana, P. Bhojane, M. Pusty, V. Bagwe, Mater. Res. Express, 2, No. 10, 105017 (2015).Y. Kumar, A. K. Rana, P. Bhojane, M. Pusty, V. Bagwe, Mater. Res. Express, 2, No. 10, 105017 (2015).S. Kanmani, N. Rajamanickam, K. Ramachandran, Org. Electron., 15, No. 10, 2302–2310 (2014). –12000 –8000 –4000 0 4000 8000 12000S. Kanmani, N. Rajamanickam, K. Ramachandran, Org. Electron., 15, No. 10, 2302–2310 (2014). –12000 –8000 –4000 0 4000 8000 12000D. V. Sathish, Ch. Rama Krishna, Ch. Venkata Reddy, T. Raghavendra Rao, P. S. Rao, R. V. S. S. N. Ravikumar, J. Mol. Struct., 1034, 57–61 (2013).D. V. Sathish, Ch. Rama Krishna, Ch. Venkata Reddy, T. Raghavendra Rao, P. S. Rao, R. V. S. S. N. Ravikumar, J. Mol. Struct., 1034, 57–61 (2013).D. V. Sathish, Ch. Rama Krishna, Ch. Venkata Reddy, U. S. Udayachandran Thampy, R. V. S. S. N. Ravikumar, Phys. Scr., 86, 035708 (2012).D. V. Sathish, Ch. Rama Krishna, Ch. Venkata Reddy, U. S. Udayachandran Thampy, R. V. S. S. N. Ravikumar, Phys. Scr., 86, 035708 (2012).P. Shokeen, A. Jain, A. Kapoor, Opt. Mater., 67, 32–37 (2017).P. Shokeen, A. Jain, A. Kapoor, Opt. Mater., 67, 32–37 (2017).K. Qi, B. Cheng, J. Yu, W. Ho, J. Alloys Compd., 727, 792–820 (2017).K. Qi, B. Cheng, J. Yu, W. Ho, J. Alloys Compd., 727, 792–820 (2017).N. Kumaresan, K. Ramamurthi, R. Babu, K. Sethuraman, S. M. Babu, Appl. Surf. Sci., 418, 138–146 (2017).N. Kumaresan, K. Ramamurthi, R. Babu, K. Sethuraman, S. M. Babu, Appl. Surf. Sci., 418, 138–146 (2017).S. Radhika, J. Thomas, J. Environ. Chem. Eng., 5, 4239–4250 (2017).S. Radhika, J. Thomas, J. Environ. Chem. Eng., 5, 4239–4250 (2017).S. J. Pearton, F. Ren, Int. Mater. Rev., 59, 61–83 (2014).S. J. Pearton, F. Ren, Int. Mater. Rev., 59, 61–83 (2014).Y.-P. Xu Yun, Jin Lu, Ma Xiang-Yang, Yang De-Ren, Acta Phys. Sin., 62, 84207 (2013).Y.-P. Xu Yun, Jin Lu, Ma Xiang-Yang, Yang De-Ren, Acta Phys. Sin., 62, 84207 (2013).Y.-C. Shen, C.-H. Yang, S.-W. Chen, S.-H. Wu, T.-L. Yang, J.-J. Huang, Biosens. Bioelectron., 54, 306–310 (2014).Y.-C. Shen, C.-H. Yang, S.-W. Chen, S.-H. Wu, T.-L. Yang, J.-J. Huang, Biosens. Bioelectron., 54, 306–310 (2014).M. Hjiri, L. El Mir, S. G. Leonardi, A. Pistone, L. Mavilia, G. Neri, Sens. Act. B: Chem., 196, 413–420 (2014).M. Hjiri, L. El Mir, S. G. Leonardi, A. Pistone, L. Mavilia, G. Neri, Sens. Act. B: Chem., 196, 413–420 (2014).V. S. Khomchenko, N. N. Roshchina, L. V. Zavyalova, V. V. Strelchuk, G. S. Svechnikov, N. P. Tatyanenko, V. L. Gromashevskii, O. S. Litvin, E. A. Avramenko, B. A. Snopok, Tech. Phys., 59, 93–101 (2014).V. S. Khomchenko, N. N. Roshchina, L. V. Zavyalova, V. V. Strelchuk, G. S. Svechnikov, N. P. Tatyanenko, V. L. Gromashevskii, O. S. Litvin, E. A. Avramenko, B. A. Snopok, Tech. Phys., 59, 93–101 (2014).M. Yuste, R. E. Galindo, O. M. Sacristan, I. Minguez-Bacho, R. Sonia, M. Hernandez-Velez, O. Sanchez, Mater. Res. Express, 1, 045028 (2014).M. Yuste, R. E. Galindo, O. M. Sacristan, I. Minguez-Bacho, R. Sonia, M. Hernandez-Velez, O. Sanchez, Mater. Res. Express, 1, 045028 (2014).W. Zhang, J. Zhao, Z. Liu, Z. Liu, Appl. Surf. Sci., 284, 49–52 (2013).W. Zhang, J. Zhao, Z. Liu, Z. Liu, Appl. Surf. Sci., 284, 49–52 (2013).M. Venkatesan, C. B. Fitzgerald, J. M. D. Coey, Nature, 450, 630 (2004).M. Venkatesan, C. B. Fitzgerald, J. M. D. Coey, Nature, 450, 630 (2004).A. Chakrabarty, C. H. Patterson, Phys. Rev. B: Condens. Mater. Mater. Phys., 84, 054441 (2011).A. Chakrabarty, C. H. Patterson, Phys. Rev. B: Condens. Mater. Mater. Phys., 84, 054441 (2011).W. Liu, W. Li, Z. Hu, Z. Tang, X. Tang, J. Appl. Phys., 110, 013901 (2011).W. Liu, W. Li, Z. Hu, Z. Tang, X. Tang, J. Appl. Phys., 110, 013901 (2011).S. Shit, T. Kamilya, P. K. Samanta, Mater. Lett., 118, 123–125 (2014).S. Shit, T. Kamilya, P. K. Samanta, Mater. Lett., 118, 123–125 (2014).M. V. Kuznetsov, Y. G. Morozov, O. V. Belousova, D. Ortega, Inorg. Mater., 50, 369–378 (2014).M. V. Kuznetsov, Y. G. Morozov, O. V. Belousova, D. Ortega, Inorg. Mater., 50, 369–378 (2014).S. S. Xiao, L. Zhao, Y. H. Liu, J. S. Lian, Appl. Surf. Sci., 283, 781–787 (2013).S. S. Xiao, L. Zhao, Y. H. Liu, J. S. Lian, Appl. Surf. Sci., 283, 781–787 (2013).K.S. Babu, A. R. Reddy, K. V. Reddy, Mater. Res. Bull., 49, 537–543 (2014).K.S. Babu, A. R. Reddy, K. V. Reddy, Mater. Res. Bull., 49, 537–543 (2014).G. N. Narayanan, R. S. Ganesh, A. Karthigeyan, Thin Solid Films, 598, 39–45 (2016).G. N. Narayanan, R. S. Ganesh, A. Karthigeyan, Thin Solid Films, 598, 39–45 (2016).K. H. Kim, et al., Superlattices Microstruct., 91, 188–192 (2016).K. H. Kim, et al., Superlattices Microstruct., 91, 188–192 (2016).A. Ghosh, N. G. Deshpande, Y. G. Gudage, R. A. Joshi, A. A. Sagade, D. M. Phase, Ramphal Sharma, J. Alloys Compd., 469, No. 1-2, 56–60 (2009).A. Ghosh, N. G. Deshpande, Y. G. Gudage, R. A. Joshi, A. A. Sagade, D. M. Phase, Ramphal Sharma, J. Alloys Compd., 469, No. 1-2, 56–60 (2009).T. Akilan, N. Srinivasan, R. Saravanan, Mater. Sci. Semicond. Proc., 30, 381–387 (2015).T. Akilan, N. Srinivasan, R. Saravanan, Mater. Sci. Semicond. Proc., 30, 381–387 (2015).H. Morcos, U. Ozgur, Zinc Oxide: Fundamentals, Materials and Device Technology, Wiley-VCH (2009).H. Morcos, U. Ozgur, Zinc Oxide: Fundamentals, Materials and Device Technology, Wiley-VCH (2009).E. N. Budilova, V. A. Nikitenko, S. M. Kokin, Bull. Russ. Acad. Sci. Phys., 79, 160–164 (2015).E. N. Budilova, V. A. Nikitenko, S. M. Kokin, Bull. Russ. Acad. Sci. Phys., 79, 160–164 (2015).V. A. Nikitenko, S. M. Kokin, S. G. Stouhin Anomalies, J. Appl. Spectrosc., 86, 567–571 (2019).V. A. Nikitenko, S. M. Kokin, S. G. Stouhin Anomalies, J. Appl. Spectrosc., 86, 567–571 (2019).V. A. Nikitenko, J. Appl. Spectrosc., 57, 783–798 (1992).V. A. Nikitenko, J. Appl. Spectrosc., 57, 783–798 (1992).S. Benramache, et al., J. Semicond., 35, No. 4, 042001 (2014).S. Benramache, et al., J. Semicond., 35, No. 4, 042001 (2014).S. Deshpande, et al., Appl. Phys. Lett., 87, No. 13, 133113 (2005).S. Deshpande, et al., Appl. Phys. Lett., 87, No. 13, 133113 (2005).

The authors declare that there are no conflicts of interest present.