zhpsЖурнал прикладной спектроскопииZhurnal Prikladnoii Spektroskopii0514-7506B. I. Stepanov Institute of Physics of the National Academy of Scienceszhps-1073Research ArticleАННОТАЦИИ АНГЛОЯЗЫЧНЫХ СТАТЕЙABSTRACTS ENGLISH-LANGUAGE ARTICLESОптические и диэлектрические свойства нематических жидких кристаллов ZnO, полученных методом химического осажденияOptical and Dielectric Properties of ZnO Nematic Liquid Crystals Prepared by the Chemical Precipitation MethodRajuK. V. S. N.RajuK. V. S. N.

Ваддесварам

Vaddeswaram

BegumSk. S.BegumSk. S.

Потхавараппаду

Pothavarappadu

MadhavB. T. P.MadhavB. T. P.

Ваддесварам

Vaddeswaram

RaoM. C.RaoM. C.

Виджаявада

Vijayawada

raomc72@gmail.comОтделение физики Образовательного фонда Конеру ЛакшмайяDepartment of Physics, Koneru Lakshmaiah Educational FoundationТехнологический институт NRIDepartment of Physics, NRI Institute of TechnologyИсследовательский центр антенн и жидких кристаллов Образовательного фонда Конеру ЛакшмайиAntennas and Liquid Crystals Research Center, Department of ECE, Koneru Lakshmaiah Education FoundationКолледж Андхра ЛойолаDepartment of Physics, Andhra Loyola College202226052022893437437Copyright © Raju K., Begum S.S., Madhav B.T., Rao M.C., 20222022Raju K., Begum S.S., Madhav B.T., Rao M.C.Raju K., Begum S.S., Madhav B.T., Rao M.C.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://zhps.ejournal.by/jour/article/view/1073

В нематические жидкие кристаллы 4-пентил-4'-цианобифенила (5CB) методом химического осаждения диспергированы наночастицы ZnO небольшой концентрации. Фазовые превращения, фазовое замедление и температура перехода образцов исследованы методами поляризационной оптической микроскопии и дифференциальной сканирующей калориметрии. Диэлектрические свойства определены методом диэлектрической спектроскопии в диапазоне частот 1 Гц–10 МГц. Новая фаза идентифицирована и подтверждена диэлектрическими параметрами в диспергированном ZnO 5CB (N5CB). Оценены температурная зависимость времени релаксации для образцов и влияние наночастиц на расположение решетки. Исследованы температурная зависимость и влияние дисперсии наночастиц ZnO на диэлектрическую проницаемость и диэлектрические потери. Установлена чувствительность мезогенных фаз к внешним воздействиям. Сделан вывод о перспективах применения N5CB при изготовлении быстродействующих коммутационных устройств.

Mesogenic 4-pentyl-4′-cyanobiphenyl (5CB) is a commonly used dielectric material for display devices and liquid crystal biosensors. A small concentration of ZnO nanoparticles was dispersed in 5CB nematic liquid crystals by the chemical precipitation method. The phase changes, phase retardation, and transition temperature of the prepared samples were studied by polarizing optical microscopy (POM) and differential scanning calorimetry analysis. The dielectric properties were measured by dielectric spectroscopy, which was performed within the frequency range from 1 Hz to 10 MHz. A novel phase was identified and confirmed by the dielectric parameters in dispersed ZnO 5CB (N5CB). Specifically, the temperature dependence of relaxation times was estimated for both the samples, which strengthen the POM studies and the influence of nanoparticles on the lattice arrangement. The temperature dependence and the dispersion effect of ZnO nanoparticles on the dielectric constant and dielectric losses were also studied. The sensitivity of mesogenic phases to external forces was confirmed through the present work. From all these results, it has been concluded that N5CB finds potential application in the preparation of fast switching devices.

жидкий кристаллнаночастица ZnOполяризационная оптическая микроскопиядиэлектрическая проницаемостьдиэлектрическая постояннаявремя релаксацииliquid crystalsZnO nanoparticlespolarizing optical microscopydielectric permittivitydielectric constantrelaxation timeReferencesA. Achour, R. L. Porto, M. Akram Soussou, M. Islam, M. Boujtita, K. Ait, A. Djouadi, T. Brousse, J. Power Sour., 300, 525–532 (2015).A. Achour, R. L. Porto, M. Akram Soussou, M. Islam, M. Boujtita, K. Ait, A. Djouadi, T. Brousse, J. Power Sour., 300, 525–532 (2015).X. Wang, P. See Lee, J. Mater. Chem. A, 3, 21706–21712 (2015).X. Wang, P. See Lee, J. Mater. Chem. A, 3, 21706–21712 (2015).Q. Ke, J. Wang, J. Materiomics, 2, 37–54 (2016).Q. Ke, J. Wang, J. Materiomics, 2, 37–54 (2016).S. Sampath, D. D. Sarma, A. K. Shukla, ACS Energy Lett., 1, 1162–1164 (2016).S. Sampath, D. D. Sarma, A. K. Shukla, ACS Energy Lett., 1, 1162–1164 (2016).O. Muntesharia, J. Lauc, A. Krishnana, B. Dunnc, L. Pilon, J. Power Sour., 374, 257–268 (2018).O. Muntesharia, J. Lauc, A. Krishnana, B. Dunnc, L. Pilon, J. Power Sour., 374, 257–268 (2018).A. Armutlulu, L. A. Bottomley, S. A. Bidstrup Allen, M. G. Allen, Chem. Electrochem., 2, 236–245 (2014).A. Armutlulu, L. A. Bottomley, S. A. Bidstrup Allen, M. G. Allen, Chem. Electrochem., 2, 236–245 (2014).L. N. Jin, F. Shao, C. Jin, J. N. Zhang, P. Liu, M. X. Guo, S. W. Bian, Electrochim. Acta, 249, 387–394 (2017).L. N. Jin, F. Shao, C. Jin, J. N. Zhang, P. Liu, M. X. Guo, S. W. Bian, Electrochim. Acta, 249, 387–394 (2017).S. Sreehari Sastry, S. Salma Begum, T. Vindhya Kumari, V. R. K. Murthy, S. T. Ha, Asian J. Chem., 9, 2462–2471 (2012).S. Sreehari Sastry, S. Salma Begum, T. Vindhya Kumari, V. R. K. Murthy, S. T. Ha, Asian J. Chem., 9, 2462–2471 (2012).K. V. Surya Narayana Raju, S. Salma Begum, B. Dharma Sagar, S. Babu, Rasayan J. Chem., 10, 37–45 (2017).K. V. Surya Narayana Raju, S. Salma Begum, B. Dharma Sagar, S. Babu, Rasayan J. Chem., 10, 37–45 (2017).A. K. Srivastava, A. K. Misra, P. B. Chand, R. Manohar, J. P. Shukla, Phys. Lett. A, 37, 490–498 (2007).A. K. Srivastava, A. K. Misra, P. B. Chand, R. Manohar, J. P. Shukla, Phys. Lett. A, 37, 490–498 (2007).R. Manohar, S. P. Yadav, A. K. Srivastava, A. K. Misra, K. K. Pandey, P. K. Sharma, A. C. Pandey, Jpn. J. Appl. Phys., 48, 101501–101506 (2009).R. Manohar, S. P. Yadav, A. K. Srivastava, A. K. Misra, K. K. Pandey, P. K. Sharma, A. C. Pandey, Jpn. J. Appl. Phys., 48, 101501–101506 (2009).J. L. Gomez, O. Tigli, J. Mater. Sci., 48, No. 2, 612–624 (2013).J. L. Gomez, O. Tigli, J. Mater. Sci., 48, No. 2, 612–624 (2013).M. Chaari, A. Matoussi, Phys. B Condens. Mater., 407, 3441–3447 (2012).M. Chaari, A. Matoussi, Phys. B Condens. Mater., 407, 3441–3447 (2012).P. G. Cummins, D. A. Dunmur, D. A. Laidler, J. Mol. Cryst. Liq. Cryst., 30, 109–123 (1975).P. G. Cummins, D. A. Dunmur, D. A. Laidler, J. Mol. Cryst. Liq. Cryst., 30, 109–123 (1975).A. Bogi, S. Faetti, J. Liq. Cryst., 28, 729–739 (2001).A. Bogi, S. Faetti, J. Liq. Cryst., 28, 729–739 (2001).V. A. Greanya, A. P. Malanoski, B. T. Weslowski, M. S. Spector, Liq. Cryst., 32, 933–941 (2007).V. A. Greanya, A. P. Malanoski, B. T. Weslowski, M. S. Spector, Liq. Cryst., 32, 933–941 (2007).S. I. Zhou, K. Neupane, Y. A. Nastishin, A. R. Baldwin, S. V. Shiyanovskii, O. D. Lavrentovich, S. Sprunt, Liq. Cryst., 10, 6571–6581 (2017).S. I. Zhou, K. Neupane, Y. A. Nastishin, A. R. Baldwin, S. V. Shiyanovskii, O. D. Lavrentovich, S. Sprunt, Liq. Cryst., 10, 6571–6581 (2017).S. Mohyeddine, M. B. Pandey, D. Revannasiddaiah, Phase Trans., 82, 11–18 (2009).S. Mohyeddine, M. B. Pandey, D. Revannasiddaiah, Phase Trans., 82, 11–18 (2009).M. A. Bates, G. R. Luckhurst, Mol. Phys., 99, 1365–1371 (2001).M. A. Bates, G. R. Luckhurst, Mol. Phys., 99, 1365–1371 (2001).C. Wakai, A. Oleinikova, M. Ott, H. Weingärtner, J. Phys. Chem. B, 109, 17028–17030 (2005).C. Wakai, A. Oleinikova, M. Ott, H. Weingärtner, J. Phys. Chem. B, 109, 17028–17030 (2005).A. Hourri, T. K. Bose, J. Thoen, Phys. Rev. E, 63, 051702 (2001).A. Hourri, T. K. Bose, J. Thoen, Phys. Rev. E, 63, 051702 (2001).B. J. Thoen, T. K. Bose, Handbook of Low and High Dielectric Materials and their Applications, H. S. Nalwa Academic Press, San Diego, 1, 501–561 (1999).B. J. Thoen, T. K. Bose, Handbook of Low and High Dielectric Materials and their Applications, H. S. Nalwa Academic Press, San Diego, 1, 501–561 (1999).K. Rajendiran, K. Thananjeyan, S. T. Yoganandham, Inorg. Chem. Comm., 117, 107954(1–7) (2020).K. Rajendiran, K. Thananjeyan, S. T. Yoganandham, Inorg. Chem. Comm., 117, 107954(1–7) (2020).V. Tomar, T. F. Roberts, N. L. Abbott, J. P. Hernández-Ortiz, J. J. de Pablo, Langmuir, 28, 6124–6131 (2012).V. Tomar, T. F. Roberts, N. L. Abbott, J. P. Hernández-Ortiz, J. J. de Pablo, Langmuir, 28, 6124–6131 (2012).R. P. Pan, T. R. Tsai, C. Y. Chen, C. H. Wang, C. L. Pan, Mol. Cryst. Liq. Cryst., 409, 137–144 (2004).R. P. Pan, T. R. Tsai, C. Y. Chen, C. H. Wang, C. L. Pan, Mol. Cryst. Liq. Cryst., 409, 137–144 (2004).K. Tripathi, K. Mishra, S. M. Swadesh, K. Guptha, R. Manohar, J. Mol. Struct., 1035, 371–377 (2013).K. Tripathi, K. Mishra, S. M. Swadesh, K. Guptha, R. Manohar, J. Mol. Struct., 1035, 371–377 (2013).A. A. Ward, State of the Art – Dielectric Materials for Advanced Applications, National Research Centre, Egypt (2015).A. A. Ward, State of the Art – Dielectric Materials for Advanced Applications, National Research Centre, Egypt (2015).M. M. Abdel-Aal, M. A. Ahmed, L. Ateya, J. Phys. Soc. Jpn., 65, 3351–3356 (1996).M. M. Abdel-Aal, M. A. Ahmed, L. Ateya, J. Phys. Soc. Jpn., 65, 3351–3356 (1996).A. K. Jonscher, J. Phys. D: Appl. Phys., 32, 57–70 (1999).A. K. Jonscher, J. Phys. D: Appl. Phys., 32, 57–70 (1999).C. C. Homes, S. M. Shapiro, T. Vogt, Sciences, 293, 673–676 (2001).C. C. Homes, S. M. Shapiro, T. Vogt, Sciences, 293, 673–676 (2001).A. J. Martin, G. Meier, A. Saupe, Symp. Faraday Soc., 5, 119–133 (1971).A. J. Martin, G. Meier, A. Saupe, Symp. Faraday Soc., 5, 119–133 (1971).G. Meir, A. Saupe, Mol. Cryst. Liq. Cryst., 1, 515–525 (1996).G. Meir, A. Saupe, Mol. Cryst. Liq. Cryst., 1, 515–525 (1996).B. Bahadur, R. K. Sarna, V. G. Bhide, Mol. Cryst. Liq. Cryst., 88, 151–165 (1982).B. Bahadur, R. K. Sarna, V. G. Bhide, Mol. Cryst. Liq. Cryst., 88, 151–165 (1982).

The authors declare that there are no conflicts of interest present.