We studied the behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates by the attenuated total reflection (ATR) method and time-of-flight secondary ion mass spectrometry. Nitrogen was introduced into a dielectric formed by pyrogenic oxidation at a temperature of 850 ºС in an atmosphere of wet oxygen by implantation of N+ ions with an energy of 40 keV at doses of 2.5·1014 and 1.0·1015 cm–2, followed by rapid thermal annealing at a temperature of 1000 or 1050 ºС with a duration of 15 s in air. Nitridization of some of the samples was carried out during thermal annealing in a nitrogen atmosphere with the addition of a small amount of oxygen at a temperature of 1200 ºС for 120 minutes. It is established that during heat treatments, the majority of nitrogen atoms diffuse to the SiО2/Si interface and accumulate in the near-boundary region of the oxide. The ATR spectra show an absorption band with maxima at ~2320 and 2360 cm–1, which is probably due to vibrations of double cumulative bonds of the O=Si=N– type. The formation of these bonds is due to the interaction of nitrogen with dangling bonds at the silicon-dielectric interface, as a result of which uncompensated or strained bonds are replaced by more stable ones. The resulting stronger chemical bonds prevent charge accumulation on the surface of the SiО2/Si interface. Keywords: gate dielectric, heat treatment, ion implantation, attenuated total reflection.