zhpsЖурнал прикладной спектроскопииZhurnal Prikladnoii Spektroskopii0514-7506B. I. Stepanov Institute of Physics of the National Academy of Scienceszhps-1286Research Article******Влияние температуры на видимую фотолюминесценцию термически отожженных нанокристаллических пленок PbSeEffect of Temperature on Visible Photoluminescence of Thermally Annealed PbSe Nanocrystalline FilmsWuW.WuWei

Школа физики 

Чэнду

School of Physics

Chengdu

LiB.LiBo

Школа физики 

Чэнду

School of Physics

Chengdu

XiangX.XiangXia

Школа физики 

Чэнду

School of Physics

Chengdu

xiaxiang@uestc.edu.cnZuX.ZuXiaotao

Школа физики 

Чэнду

School of Physics

Chengdu

Китайский университет электронной науки и технологииUniversity of Electronic Science and Technology of China2023260320239023507Copyright © Wu W., Li B., Xiang X., Zu X., 20232023Wu W., Li B., Xiang X., Zu X.Wu W., Li B., Xiang X., Zu X.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://zhps.ejournal.by/jour/article/view/1286

Исследована фотолюминесценция (ФЛ) нанокристаллических пленок PbSe, отожженных при различных температурах. Видимая ФЛ на длинах волн 655 и 466 нм наблюдается для свежеприготовленных пленок PbSe, а повышенная интенсивность двух максимумов ФЛ связана с оптимизированным качеством кристаллизации наночастиц PbSe после отжига при 50–150°C. Поскольку температура отжига >200°С, сильное повреждение поверхности пленок PbSe, вызванное примесными фазами оксида и дефектами дислокаций, приводит к снижению кристалличности PbSe и более низким интенсивностям ФЛ, что подтверждено методом рентгеновской дифракции. При температуре отжига >200°С наблюдается еще один максимум излучения при 429 нм из-за появления примесной фазы PbO, интенсивность которого сильно зависит от содержания PbO, тогда как при температуре >350°С интенсивность ФЛ уменьшается из-за образования PbSeOx.

The photoluminescence (PL) performance of thermally annealed PbSe nanocrystalline films has been investigated at different temperatures. The visible PL signals at 655 and 466 nm are observed for the asprepared PbSe films, and the enhanced intensities of the two PL peaks are closely related to the optimized crystallization quality of PbSe nanoparticles after annealing at 50–150°C. However, as the annealing temperature is above 200°C, the severe surface damage of PbSe films induced by the oxide impurity phases and dislocation defects results in the reduction of the crystallinity of PbSe and the lower intensities of PL signals, which have been proved by means of X-ray diffraction (XRD) characterization. In addition, another emission peak at 429 nm is observed at the annealing temperature above 200°C owing to the appearance of the PbO impurity phase, and its intensity strongly depends on the content of the PbO impurity phase, whereas the PL intensity decreases above 350°C owing to the formation of PbSeOx.

пленка PbSeтемпература отжигафотолюминесценцияпримесная фаза PbOплотность дислокацийPbSe filmannealing temperaturephotoluminescencePbO impurity phasedislocation densityThis work was supported by the National Natural Science Foundation of ChinaChina Academy of Engineering Physics Joint Foundation (NSAF) of China (Grant U1630126).ReferencesA. Namekawa, R. Katoh, Chem. Phys. Lett., 659, 154–158 (2016).A. Namekawa, R. Katoh, Chem. Phys. Lett., 659, 154–158 (2016).V. Arivazhagan, M. M. Parvathi, S. Rajesh, Vacuum, 99, 95–98 (2014).V. Arivazhagan, M. M. Parvathi, S. Rajesh, Vacuum, 99, 95–98 (2014).L. Zhang, Y. Zhang, S. V. Kershaw, et al., Nanotechnology, 25, 105704 (2014).L. Zhang, Y. Zhang, S. V. Kershaw, et al., Nanotechnology, 25, 105704 (2014).T. Tohidi, K. Jamshidi-Ghaleh, Appl. Phys. A, 118, 1247–1258 (2015).T. Tohidi, K. Jamshidi-Ghaleh, Appl. Phys. A, 118, 1247–1258 (2015).J. P. Heremans, V. Jovovic, E. S. Toberer, et al., Science, 321, 554–557 (2008).J. P. Heremans, V. Jovovic, E. S. Toberer, et al., Science, 321, 554–557 (2008).H. Zogg, S. Blunier, T. Hoshino, et al., IEEE Trans Electron Devices, 38, 1110–1117 (1991).H. Zogg, S. Blunier, T. Hoshino, et al., IEEE Trans Electron Devices, 38, 1110–1117 (1991).7. F. W. Wise, Acc. Chem. Res., 33, 773–780 (2000).7. F. W. Wise, Acc. Chem. Res., 33, 773–780 (2000).W. L. Ma, J. M. Luther, H. M. Zheng, et al., Nano Lett., 9, 1699–1703 (2009).W. L. Ma, J. M. Luther, H. M. Zheng, et al., Nano Lett., 9, 1699–1703 (2009).Y. Liu, M. Gibbs, J. Puthussery, et al., Nano Lett., 10, 1960–1969 (2010).Y. Liu, M. Gibbs, J. Puthussery, et al., Nano Lett., 10, 1960–1969 (2010).W. R. Feng, X. Y. Wang, H. Zhou, et al., Vacuum, 109, 108–111 (2014).W. R. Feng, X. Y. Wang, H. Zhou, et al., Vacuum, 109, 108–111 (2014).F. G. Hone, F. B. Dejene, J. Mater. Sci. Mater. Electron., 28, 5979–5989 (2017).F. G. Hone, F. B. Dejene, J. Mater. Sci. Mater. Electron., 28, 5979–5989 (2017).M. Bouroushian, Z. Loizos, N. Spyrellis, et al., Thin Solid Films, 229, 101–106 (1993).M. Bouroushian, Z. Loizos, N. Spyrellis, et al., Thin Solid Films, 229, 101–106 (1993).L. M. Peter, R. L. Wang, Electrochem. Commun., 1, 554–558 (1999).L. M. Peter, R. L. Wang, Electrochem. Commun., 1, 554–558 (1999).S. P. Zimin, I. I. Amirov, V. V. Naumov, Semiconductors, 50, 1125–1129 (2016).S. P. Zimin, I. I. Amirov, V. V. Naumov, Semiconductors, 50, 1125–1129 (2016).R. P. Sugavaneshwar, T. D. Dao, T. Yokoyama, et al., Radiation Effects and Defects in Solids, 173, 112–117 (2018).R. P. Sugavaneshwar, T. D. Dao, T. Yokoyama, et al., Radiation Effects and Defects in Solids, 173, 112–117 (2018).L. P. Biro, R. M. Candea, G. Borodi, et al., Thin Solid Films, 165, 303–315 (1988).L. P. Biro, R. M. Candea, G. Borodi, et al., Thin Solid Films, 165, 303–315 (1988).M. C. Torquemada, M. T. Rodrigo, G. Vergara, et al., J. Appl. Phys., 93, 1778–1784 (2003).M. C. Torquemada, M. T. Rodrigo, G. Vergara, et al., J. Appl. Phys., 93, 1778–1784 (2003).V. Kasiyan, Z. Dashevsky, C. M. Schwarz, et al., J. Appl. Phys., 112, 086101 (2012).V. Kasiyan, Z. Dashevsky, C. M. Schwarz, et al., J. Appl. Phys., 112, 086101 (2012).P. Kumar, M. Pfeffer, E. Schweda, et al., J. Alloys Compd., 724, 316–326 (2017).P. Kumar, M. Pfeffer, E. Schweda, et al., J. Alloys Compd., 724, 316–326 (2017).S. Ganguly, S. Yoo, J. Electron. Mater., 48, 6169–6175 (2019).S. Ganguly, S. Yoo, J. Electron. Mater., 48, 6169–6175 (2019).L. N. Maskaeva, V. M. Yurk, V. F. Markov, et al., Semiconductors, 54, 1191–1197 (2020).L. N. Maskaeva, V. M. Yurk, V. F. Markov, et al., Semiconductors, 54, 1191–1197 (2020).S. Y. Yan, Q. Yang, S. L. Feng, et al., J. Electron. Mater., 49, 4929–4935 (2020).S. Y. Yan, Q. Yang, S. L. Feng, et al., J. Electron. Mater., 49, 4929–4935 (2020).P. Kumar, M. Pfeffer, C. Berthold, et al., J. Alloys Compd., 735, 1654–1661 (2018).P. Kumar, M. Pfeffer, C. Berthold, et al., J. Alloys Compd., 735, 1654–1661 (2018).F. Zhao, S. Mukherjee, J. Ma, et al., Appl. Phys. Lett., 92, 211110 (2008).F. Zhao, S. Mukherjee, J. Ma, et al., Appl. Phys. Lett., 92, 211110 (2008).D. W. Ma, C. Cheng, Y. N. Zhang, et al., Opt. Mater., 37, 834–839 (2014).D. W. Ma, C. Cheng, Y. N. Zhang, et al., Opt. Mater., 37, 834–839 (2014).W. Wu, Y. L. Tang, B. Li, et al., Opt. Mater., 118, 111233 (2021).W. Wu, Y. L. Tang, B. Li, et al., Opt. Mater., 118, 111233 (2021).W. E. Mahmoud, Polym. Adv. Technol., 22, 2550–2555 (2011).W. E. Mahmoud, Polym. Adv. Technol., 22, 2550–2555 (2011).M. R. A. Bhuiyan, M. A. A. Azad, S. M. F. Hasan, Indian J. Pure. Appl. Phys., 49, 180–185 (2011).M. R. A. Bhuiyan, M. A. A. Azad, S. M. F. Hasan, Indian J. Pure. Appl. Phys., 49, 180–185 (2011).G. K. Williamson, R. E. Smallman, Philos. Mag., 1, 34–46 (1956).G. K. Williamson, R. E. Smallman, Philos. Mag., 1, 34–46 (1956).J. I. Langford, A. J. C. Wilson, J. Appl. Cryst., 11, 102–113 (1978).J. I. Langford, A. J. C. Wilson, J. Appl. Cryst., 11, 102–113 (1978).T. H. Gfroerer, In: Encyclopedia of Analytical Chemistry, John Wiley & Sons, Ltd. (2006), https://doi.org/10.1002/9780470027318.a2510T. H. Gfroerer, In: Encyclopedia of Analytical Chemistry, John Wiley & Sons, Ltd. (2006), https://doi.org/10.1002/9780470027318.a2510N. Mythili, K. T. Arulmozhi, Int. J. Sci. Eng. Res., 5, 412–416 (2014).N. Mythili, K. T. Arulmozhi, Int. J. Sci. Eng. Res., 5, 412–416 (2014).R. Yousefi, A. K. Zak, F. Jamali-Sheini, et al., Ceram. Int., 40, 11699–11703 (2014).R. Yousefi, A. K. Zak, F. Jamali-Sheini, et al., Ceram. Int., 40, 11699–11703 (2014).C. Gautier, M. Cambon-Muller, M. Averous, Appl. Surf. Sci., 141, 157–163 (1999).C. Gautier, M. Cambon-Muller, M. Averous, Appl. Surf. Sci., 141, 157–163 (1999).C. Cai, S. B. Han, X. T. Zhang, et al., RSC Adv., 12, 6205–6213 (2022).C. Cai, S. B. Han, X. T. Zhang, et al., RSC Adv., 12, 6205–6213 (2022).X. G. Sun, K. W. Gao, X. L. Pang, et al., Appl. Surf. Sci., 356, 978–985 (2015).X. G. Sun, K. W. Gao, X. L. Pang, et al., Appl. Surf. Sci., 356, 978–985 (2015).V. V. Tomaev, L. L. Makarov, P. A. Tikhonov, et al., Glass Phys. Chem., 30, 349–355 (2004).V. V. Tomaev, L. L. Makarov, P. A. Tikhonov, et al., Glass Phys. Chem., 30, 349–355 (2004).

The authors declare that there are no conflicts of interest present.