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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-1431</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>АННОТАЦИИ АНГЛОЯЗЫЧНЫХ СТАТЕЙ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ABSTRACTS ENGLISH-LANGUAGE ARTICLES</subject></subj-group></article-categories><title-group><article-title>Эллипсометрический подход в изучении изменений показателя преломления и коэффициента экстинкции тонкой однослойной пленки меди при термическом отжиге</article-title><trans-title-group xml:lang="en"><trans-title>Variation in Refractive Index and Extinction Coefficient of a Very Thin Copper Film by Thermal Annealing: an Ellipsometric Approach</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Somakumar</surname><given-names>А. K.</given-names></name><name name-style="western" xml:lang="en"><surname>Somakumar</surname><given-names>A. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Коттаям, Керала</p></bio><bio xml:lang="en"><p>Ajeesh Kumar Somakumar</p><p>Kottayam, Kerala</p></bio><email xlink:type="simple">infinityphotons@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Школа прикладной физики Университета Махатмы Ганди</institution></aff><aff xml:lang="en"><institution>School of Pure and Applied Physics, Mahatma Gandhi University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>25</day><month>11</month><year>2023</year></pub-date><volume>90</volume><issue>5</issue><fpage>803</fpage><lpage>803</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Somakumar А.K., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Somakumar А.K.</copyright-holder><copyright-holder xml:lang="en">Somakumar A.K.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/1431">https://zhps.ejournal.by/jour/article/view/1431</self-uri><abstract><p>Исследованы оптические характеристики тонкой поглощающей однослойной пленки меди при различных температурах отжига. Спектроскопическая эллипсометрия применена в качестве эффективного инструмента для точной настройки оптических констант тонких пленок, особенно для достижения конкретных значений показателя преломления (n) и коэффициента экстинкции (k). Измерение и анализ термически осажденной на стеклянную подложку тонкой однослойной пленки меди проведены для спектроскопического эллипсометра.</p></abstract><trans-abstract xml:lang="en"><p>A pure experiment-based work was conducted to investigate the optical characteristics of a thin absorbing single-layer copper film at various annealing temperatures. The study also systematically examined the utilization of spectroscopic ellipsometry as an effective tool for fine-tuning the optical constants of thin films, particularly for achieving specific refractive index (n) and extinction coefficient (k) values. The measurement and analysis involved a thermally deposited thin nano-sized single-layer copper film on a glass substrate, along with a spectroscopic ellipsometer.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>медь</kwd><kwd>металлическая пленка</kwd><kwd>стеклянная подложка</kwd><kwd>спектроскопическая эллипсометрия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>copper</kwd><kwd>metallic film</kwd><kwd>glass substrate</kwd><kwd>spectroscopic ellipsometry</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">The author is thankful to the spectroscopic ellipsometry instrument facility at M.G. University, Kerala, India for data collection and analysis</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">O. Stenzel, A. Macleod, Adv. Opt. Technol., 1, 463–481 (2012).</mixed-citation><mixed-citation xml:lang="en">O. Stenzel, A. Macleod, Adv. Opt. Technol., 1, 463–481 (2012).</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">H. Liu, J. Peng, W. Liu, Y. Wang, J. Wu, G. Zhang, X. Wang, Y. Yan, NPG Asia Mater., 10, 309–317 (2018).</mixed-citation><mixed-citation xml:lang="en">H. Liu, J. Peng, W. Liu, Y. Wang, J. Wu, G. Zhang, X. Wang, Y. Yan, NPG Asia Mater., 10, 309–317 (2018).</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">N. A. Tran, H. N. Tran, M. C. Dang, E. Fribourg-Blanc, Adv. Nat. Sci. Nanosci. Nanotechnol., 1 (2010).</mixed-citation><mixed-citation xml:lang="en">N. A. Tran, H. N. Tran, M. C. Dang, E. Fribourg-Blanc, Adv. Nat. Sci. Nanosci. Nanotechnol., 1 (2010).</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">C. Ramade, S. Silvestre, F. Pascal-Delannoy, B. Sorli, Int. J. Radio Freq. Identif. Technol. Appl., 4, 49–66 (2012).</mixed-citation><mixed-citation xml:lang="en">C. Ramade, S. Silvestre, F. Pascal-Delannoy, B. Sorli, Int. J. Radio Freq. Identif. Technol. Appl., 4, 49–66 (2012).</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">V. Ramya, K. Neyvasagam, R. Chandramohan, S. Valanarasu, A. M. F. Benial, J. Mater. Sci. Mater. Electron., 26, 8489–8496 (2015).</mixed-citation><mixed-citation xml:lang="en">V. Ramya, K. Neyvasagam, R. Chandramohan, S. Valanarasu, A. M. F. Benial, J. Mater. Sci. Mater. Electron., 26, 8489–8496 (2015).</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">H. Derin, K. Kantarli, Appl. Phys. A Mater. Sci. Process, 75, 391–395 (2002).</mixed-citation><mixed-citation xml:lang="en">H. Derin, K. Kantarli, Appl. Phys. A Mater. Sci. Process, 75, 391–395 (2002).</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">J. Figueira, J. Loureiro, J. Marques, C. Bianchi, P. Duarte, M. Ruoho, I. Tittonen, I. Ferreira, ACS Appl. Mater. Interfaces, 9, 6520–6529 (2017).</mixed-citation><mixed-citation xml:lang="en">J. Figueira, J. Loureiro, J. Marques, C. Bianchi, P. Duarte, M. Ruoho, I. Tittonen, I. Ferreira, ACS Appl. Mater. Interfaces, 9, 6520–6529 (2017).</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">E. G. Turitsyna, S. Webb, Electron. Lett., 41, 40–41 (2005).</mixed-citation><mixed-citation xml:lang="en">E. G. Turitsyna, S. Webb, Electron. Lett., 41, 40–41 (2005).</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">S. M. Abd Al Kareem, W. I. Yaseen, IOP Conf. Ser. Mater. Sci. Eng., 757 (2020).</mixed-citation><mixed-citation xml:lang="en">S. M. Abd Al Kareem, W. I. Yaseen, IOP Conf. Ser. Mater. Sci. Eng., 757 (2020).</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">I. Mack, Development of innovative Coatings for sun Protection Glasses Based on the Theory of the Optimal Spectral Transmittance, PhD diss., University of Basel (2008).</mixed-citation><mixed-citation xml:lang="en">I. Mack, Development of innovative Coatings for sun Protection Glasses Based on the Theory of the Optimal Spectral Transmittance, PhD diss., University of Basel (2008).</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">B. Wang, P. W. Leu, Nano Energy, 13, 226–232 (2015).</mixed-citation><mixed-citation xml:lang="en">B. Wang, P. W. Leu, Nano Energy, 13, 226–232 (2015).</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">V. F. Drobny, L. Pulfrey, Thin Solid Films, 61, 89–98 (1979).</mixed-citation><mixed-citation xml:lang="en">V. F. Drobny, L. Pulfrey, Thin Solid Films, 61, 89–98 (1979).</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">J. N. Hilfiker, N. Singh, T. Tiwald, D. Convey, S. M. Smith, J. H. Baker, H. G. Tompkins, Thin Solid Films, 516, 7979–7989 (2008).</mixed-citation><mixed-citation xml:lang="en">J. N. Hilfiker, N. Singh, T. Tiwald, D. Convey, S. M. Smith, J. H. Baker, H. G. Tompkins, Thin Solid Films, 516, 7979–7989 (2008).</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">C. K. Carniglia, J. Opt. Soc. Am. A, 7, 848 (1990).</mixed-citation><mixed-citation xml:lang="en">C. K. Carniglia, J. Opt. Soc. Am. A, 7, 848 (1990).</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">G. Papadimitropoulos, N. Vourdas, V. E. Vamvakas, D. Davazoglou, Thin Solid Films, 515, 2428–2432 (2006).</mixed-citation><mixed-citation xml:lang="en">G. Papadimitropoulos, N. Vourdas, V. E. Vamvakas, D. Davazoglou, Thin Solid Films, 515, 2428–2432 (2006).</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">S. Schöche, N. Hong, M. Khorasaninejad, A. Ambrosio, E. Orabona, P. Maddalena, F. Capasso, Appl. Surf. Sci., 421, 778–782 (2017).</mixed-citation><mixed-citation xml:lang="en">S. Schöche, N. Hong, M. Khorasaninejad, A. Ambrosio, E. Orabona, P. Maddalena, F. Capasso, Appl. Surf. Sci., 421, 778–782 (2017).</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">D. V. Likhachev, Thin Solid Films, 669, 174–180 (2019).</mixed-citation><mixed-citation xml:lang="en">D. V. Likhachev, Thin Solid Films, 669, 174–180 (2019).</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">G. Papadimitropoulos, N. Vourdas, V. E. Vamvakas, D. Davazoglou, J. Phys. Conf. Ser., 10, 182–185 (2005).</mixed-citation><mixed-citation xml:lang="en">G. Papadimitropoulos, N. Vourdas, V. E. Vamvakas, D. Davazoglou, J. Phys. Conf. Ser., 10, 182–185 (2005).</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Y. Z. Hu, R. Sharangpani, S.-P. Tay, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., 18, 2527 (2000).</mixed-citation><mixed-citation xml:lang="en">Y. Z. Hu, R. Sharangpani, S.-P. Tay, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., 18, 2527 (2000).</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">J. B. Gong, W. Le Dong, R. C. Dai, Z. P. Wang, Z. M. Zhang, Z. J. Ding, Chin. Phys. B, 23 (2014).</mixed-citation><mixed-citation xml:lang="en">J. B. Gong, W. Le Dong, R. C. Dai, Z. P. Wang, Z. M. Zhang, Z. J. Ding, Chin. Phys. B, 23 (2014).</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">F. A. Akgul, G. Akgul, N. Yildirim, H. E. Unalan, R. Turan, Mater. Chem. Phys., 147, 987–995 (2014).</mixed-citation><mixed-citation xml:lang="en">F. A. Akgul, G. Akgul, N. Yildirim, H. E. Unalan, R. Turan, Mater. Chem. Phys., 147, 987–995 (2014).</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">R. Chauhan, A. K. Srivastava, M. Mishra, K. K. Srivastava, Integr. Ferroelectr., 119, 22–32 (2010).</mixed-citation><mixed-citation xml:lang="en">R. Chauhan, A. K. Srivastava, M. Mishra, K. K. Srivastava, Integr. Ferroelectr., 119, 22–32 (2010).</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">N. Serin, T. Serin, Ş. Horzum, Y. Çelik, Semicond. Sci. Technol., 20, 398–401 (2005).</mixed-citation><mixed-citation xml:lang="en">N. Serin, T. Serin, Ş. Horzum, Y. Çelik, Semicond. Sci. Technol., 20, 398–401 (2005).</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
