<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-1499</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>АННОТАЦИИ АНГЛОЯЗЫЧНЫХ СТАТЕЙ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ABSTRACTS ENGLISH-LANGUAGE ARTICLES</subject></subj-group></article-categories><title-group><article-title>Оптимизация термообработки для тонких золь-гель пленок CdS, полученных центрифугированием</article-title><trans-title-group xml:lang="en"><trans-title>Optimization of Thermal Annealing Effect on Sol-Gel Driven SpinCoated CdS Thin Films</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Aggarwal</surname><given-names>R.</given-names></name><name name-style="western" xml:lang="en"><surname>Aggarwal</surname><given-names>R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Пенджаб</p></bio><bio xml:lang="en"><p>Department of Physics, </p><p>Phagwara</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Kumar</surname><given-names>R.</given-names></name><name name-style="western" xml:lang="en"><surname>Kumar</surname><given-names>R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Пенджаб</p></bio><bio xml:lang="en"><p>Department of Physics, </p><p>Phagwara</p></bio><email xlink:type="simple">rajesh.12236@lpu.co.in</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Университет Пхагвары</institution></aff><aff xml:lang="en"><institution>Lovely Professional University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>14</day><month>02</month><year>2024</year></pub-date><volume>91</volume><issue>1</issue><fpage>171</fpage><lpage>171</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Aggarwal R., Kumar R., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Aggarwal R., Kumar R.</copyright-holder><copyright-holder xml:lang="en">Aggarwal R., Kumar R.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/1499">https://zhps.ejournal.by/jour/article/view/1499</self-uri><abstract><p>Проанализировано влияние термического отжига на оптические и структурные свойства тонких золь-гель пленок CdS, синтезированных методом центрифугирования при поддержании постоянного уровня pH раствора предшественника. Тонкие пленки CdS отжигались при 400, 450 и 500 °C в течение 30, 60 и 90 мин соответственно. Пропускание пленок варьировалось в пределах 60—89 % в видимой области. Ширина оптической запрещенной зоны 2.43—2.47 эВ. Результаты рентгеноструктурного и КР-анализа показывают, что кристалличность тонкой пленки CdS увеличивается с ростом температуры и времени отжига.</p></abstract><trans-abstract xml:lang="en"><p>Semiconducting nanostructured materials are preferred for optoelectronic devices due to their variable optical and electrical properties. Cadmium sulfide (CdS) thin films, due to its direct band gap, are widely used in solar cells, photodetectors, photosensors, etc. This work analyzes the effect of thermal annealing on the optical and structural properties of CdS thin films. CdS thin films are synthesized by a sol-gel spin coating technique while maintaining a constant pH level of the precursor solution. CdS thin films were annealed at 400, 450, and 500o C for 30, 60, and 90 min, respectively. The transmittance of the films varied from 60–89% in the visible region as evident from the UV analysis. The optical band gap lay in the range of 2.43–2.47 eV. The XRD and Raman analysis results reveal that the crystallinity of the CdS thin film increased with the increasing annealing temperature and time of annealing.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>CdS</kwd><kwd>тонкая пленка</kwd><kwd>чистая технология</kwd><kwd>термический отжиг</kwd><kwd>рентгеновская дифракция</kwd><kwd>комбинационное рассеяние света</kwd></kwd-group><kwd-group xml:lang="en"><kwd>CdS</kwd><kwd>thin films</kwd><kwd>clean technologies</kwd><kwd>thermal annealing</kwd><kwd>X-ray diffraction</kwd><kwd>Raman</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">M. A. Islam, M. S. Hossain, M. M. Aliyu, P. Chelvanathan, Q. Huda, M. R. Karim, K. Sopian, N. Amin, Energy Proc., 33, 203–213 (2013), https://doi.org/10.1016/j.egypro.2013.05.059.</mixed-citation><mixed-citation xml:lang="en">M. A. Islam, M. S. Hossain, M. M. Aliyu, P. Chelvanathan, Q. Huda, M. R. Karim, K. Sopian, N. Amin, Energy Proc., 33, 203–213 (2013), https://doi.org/10.1016/j.egypro.2013.05.059.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">M. G. Faraj, M. H. Eisa, M. Z. Pakhuruddin, Int. J. Electrochem. Sci., 14, 10633–10641 (2019), https://doi.org/10.20964/2019.11.11.</mixed-citation><mixed-citation xml:lang="en">M. G. Faraj, M. H. Eisa, M. Z. Pakhuruddin, Int. J. Electrochem. Sci., 14, 10633–10641 (2019), https://doi.org/10.20964/2019.11.11.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">B. Barman, K. V. Bangera, G. K. Shivakumar, Superlattices Microstruct., 137, 106349 (2020), https://doi.org/10.1016/j.spmi.2019.106349.</mixed-citation><mixed-citation xml:lang="en">B. Barman, K. V. Bangera, G. K. Shivakumar, Superlattices Microstruct., 137, 106349 (2020), https://doi.org/10.1016/j.spmi.2019.106349.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">S. S. Yesilkaya, U. Ulutas, H. M. A. Alqader, Mater. Lett., 288, 129347 (2021), https://doi.org/10.1016/j.matlet.2021.129347.</mixed-citation><mixed-citation xml:lang="en">S. S. Yesilkaya, U. Ulutas, H. M. A. Alqader, Mater. Lett., 288, 129347 (2021), https://doi.org/10.1016/j.matlet.2021.129347.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">N. Chodavadiya, A. Chapanari, J. Zinzala, J. Ray, S. Pandya, AIP Conf. Proc., 1961 (2018), https://doi.org/10.1063/1.5035207.</mixed-citation><mixed-citation xml:lang="en">N. Chodavadiya, A. Chapanari, J. Zinzala, J. Ray, S. Pandya, AIP Conf. Proc., 1961 (2018), https://doi.org/10.1063/1.5035207.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">T. Gao, Q. H. Li, T. H. Wang, Appl. Phys. Lett., 86, 1–3 (2005), https://doi.org/10.1063/1.1915514.</mixed-citation><mixed-citation xml:lang="en">T. Gao, Q. H. Li, T. H. Wang, Appl. Phys. Lett., 86, 1–3 (2005), https://doi.org/10.1063/1.1915514.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">H. Metin, R. Esen, Semicond. Sci. Technol., 18, 647–654 (2003), https://doi.org/10.1088/0268-1242/18/7/308.</mixed-citation><mixed-citation xml:lang="en">H. Metin, R. Esen, Semicond. Sci. Technol., 18, 647–654 (2003), https://doi.org/10.1088/0268-1242/18/7/308.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">K. H. Za, M. B. Mohamed, N. Y. Mostafa, Appl. Phys. A: Mater. Sci. Proc., 125, 1–12 (2019), https://doi.org/10.1007/s00339-019-2428-9.</mixed-citation><mixed-citation xml:lang="en">K. H. Za, M. B. Mohamed, N. Y. Mostafa, Appl. Phys. A: Mater. Sci. Proc., 125, 1–12 (2019), https://doi.org/10.1007/s00339-019-2428-9.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">M. Shkir, I. M. Ashraf, K. V. Chandekar, I. S. Yahia, A. Khan, H. Algarni, S. Al Faify, Sensors Actuators A: Phys., 301, 111749 (2020), https://doi.org/10.1016/j.sna.2019.111749.</mixed-citation><mixed-citation xml:lang="en">M. Shkir, I. M. Ashraf, K. V. Chandekar, I. S. Yahia, A. Khan, H. Algarni, S. Al Faify, Sensors Actuators A: Phys., 301, 111749 (2020), https://doi.org/10.1016/j.sna.2019.111749.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">D. Wu, Y. Jiang, Y. Zhang, Y. Yu, Z. Zhu, X. Lan, F. Li, C. Wu, L. Wang, L. Luo, J. Mater. Chem., 22, 23272–23276 (2012), https://doi.org/10.1039/c2jm34869a.</mixed-citation><mixed-citation xml:lang="en">D. Wu, Y. Jiang, Y. Zhang, Y. Yu, Z. Zhu, X. Lan, F. Li, C. Wu, L. Wang, L. Luo, J. Mater. Chem., 22, 23272–23276 (2012), https://doi.org/10.1039/c2jm34869a.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">S. G. Pandya, Int. J. Recent Sci. Res., 7, 14887–14890 (2016).</mixed-citation><mixed-citation xml:lang="en">S. G. Pandya, Int. J. Recent Sci. Res., 7, 14887–14890 (2016).</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">M. T. Chowdhury, M. A. Zubair, H. Takeda, K. M. A. Hussain, M. F. Islam, AIMS Mater. Sci., 4, 1095–1121 (2017), https://doi.org/10.3934/matersci.2017.5.1095.</mixed-citation><mixed-citation xml:lang="en">M. T. Chowdhury, M. A. Zubair, H. Takeda, K. M. A. Hussain, M. F. Islam, AIMS Mater. Sci., 4, 1095–1121 (2017), https://doi.org/10.3934/matersci.2017.5.1095.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">V. Vinayakumar, S. Shaji, D. Avellaneda, J. A. Aguilar-Martínez, B. Krishnan, RSC Adv., 8, 31055–31065 (2018), https://doi.org/10.1039/C8RA05662E.</mixed-citation><mixed-citation xml:lang="en">V. Vinayakumar, S. Shaji, D. Avellaneda, J. A. Aguilar-Martínez, B. Krishnan, RSC Adv., 8, 31055–31065 (2018), https://doi.org/10.1039/C8RA05662E.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">H. Khallaf, G. Chai, O. Lupan, L. Chow, S. Park, A. Schulte, Appl. Surf. Sci., 255, 4129–4134 (2009), https://doi.org/10.1016/j.apsusc.2008.10.115.</mixed-citation><mixed-citation xml:lang="en">H. Khallaf, G. Chai, O. Lupan, L. Chow, S. Park, A. Schulte, Appl. Surf. Sci., 255, 4129–4134 (2009), https://doi.org/10.1016/j.apsusc.2008.10.115.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">C. Doroody, K. S. Rahman, H. N. Rosly, M. N. Harif, M. Isah, Y. B. Kar, S. K. Tiong, N. Amin, Mater. Sci. Semicond. Proc., 133, 105935 (2021), https://doi.org/10.1016/j.mssp.2021.105935.</mixed-citation><mixed-citation xml:lang="en">C. Doroody, K. S. Rahman, H. N. Rosly, M. N. Harif, M. Isah, Y. B. Kar, S. K. Tiong, N. Amin, Mater. Sci. Semicond. Proc., 133, 105935 (2021), https://doi.org/10.1016/j.mssp.2021.105935.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">P. R. Pattnaik, S. K. Bhuyan, Compositional and Electrical Properties of Vacuum Evaporation Process of CdS Thin Films, 7, 1–4 (2019).</mixed-citation><mixed-citation xml:lang="en">P. R. Pattnaik, S. K. Bhuyan, Compositional and Electrical Properties of Vacuum Evaporation Process of CdS Thin Films, 7, 1–4 (2019).</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">S. V. Borse, S. D. Chavhan, R. Sharma, J. Alloys Compd., 436, 407–414 (2007), https://doi.org/10.1016/j.jallcom.2006.11.009.</mixed-citation><mixed-citation xml:lang="en">S. V. Borse, S. D. Chavhan, R. Sharma, J. Alloys Compd., 436, 407–414 (2007), https://doi.org/10.1016/j.jallcom.2006.11.009.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">L. S. Ravangave, R. B. Mahewar, IOSR J. Eng., 05, 6–8 (2015).</mixed-citation><mixed-citation xml:lang="en">L. S. Ravangave, R. B. Mahewar, IOSR J. Eng., 05, 6–8 (2015).</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">J. Hiie, T. Dedova, V. Valdna, K. Muska, Thin Solid Films, 511-512, 443–447 (2006), https://doi.org/10.1016/j.tsf.2005.11.070.</mixed-citation><mixed-citation xml:lang="en">J. Hiie, T. Dedova, V. Valdna, K. Muska, Thin Solid Films, 511-512, 443–447 (2006), https://doi.org/10.1016/j.tsf.2005.11.070.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">N. K. Morozova, A. A. Kanakhin, I. N. Miroshnikova, V. G. Galstyan, Semiconductors, 47, 1018–1025 (2013), https://doi.org/10.1134/S1063782613080149.</mixed-citation><mixed-citation xml:lang="en">N. K. Morozova, A. A. Kanakhin, I. N. Miroshnikova, V. G. Galstyan, Semiconductors, 47, 1018–1025 (2013), https://doi.org/10.1134/S1063782613080149.</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">S. R. Gosavi, C. P. Nikam, A. R. Shelke, A. M. Patil, S. W. Ryu, J. S. Bhat, N. G. Deshpande, Mater. Chem. Phys., 160, 244–250 (2015), https://doi.org/10.1016/j.matchemphys.2015.04.031.</mixed-citation><mixed-citation xml:lang="en">S. R. Gosavi, C. P. Nikam, A. R. Shelke, A. M. Patil, S. W. Ryu, J. S. Bhat, N. G. Deshpande, Mater. Chem. Phys., 160, 244–250 (2015), https://doi.org/10.1016/j.matchemphys.2015.04.031.</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">M. D. Devi, A. V. Juliet, K. Hari Prasad, T. Alshahrani, A. M. Alshehri, M. Shkir, S. AI Faify, Appl. Phys. A: Mater. Sci. Proc., 126, 1–11 (2020), https://doi.org/10.1007/s00339-020-04067-3.</mixed-citation><mixed-citation xml:lang="en">M. D. Devi, A. V. Juliet, K. Hari Prasad, T. Alshahrani, A. M. Alshehri, M. Shkir, S. AI Faify, Appl. Phys. A: Mater. Sci. Proc., 126, 1–11 (2020), https://doi.org/10.1007/s00339-020-04067-3.</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">R. Cuscó, J. Ibáñez, N. Domenech-Amador, L. Artús, J. Zúiga-Ṕrez, V. Muoz-Sanjoś, J. Appl. Phys., 107 (2010), https://doi.org/10.1063/1.3357377.</mixed-citation><mixed-citation xml:lang="en">R. Cuscó, J. Ibáñez, N. Domenech-Amador, L. Artús, J. Zúiga-Ṕrez, V. Muoz-Sanjoś, J. Appl. Phys., 107 (2010), https://doi.org/10.1063/1.3357377.</mixed-citation></citation-alternatives></ref><ref id="cit24"><label>24</label><citation-alternatives><mixed-citation xml:lang="ru">A. Abdolahzadeh Ziabari, F. E. Ghodsi, Sol. Energy Mater. Sol. Cells, 105, 249–262 (2012), https://doi.org/10.1016/j.solmat.2012.05.014.</mixed-citation><mixed-citation xml:lang="en">A. Abdolahzadeh Ziabari, F. E. Ghodsi, Sol. Energy Mater. Sol. Cells, 105, 249–262 (2012), https://doi.org/10.1016/j.solmat.2012.05.014.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
