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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-1521</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЛАЗЕРЫ И ЛАЗЕРНАЯ СПЕКТРОСКОПИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>LASERS AND LASER SPECTROSCOPY</subject></subj-group></article-categories><title-group><article-title>Возможность накачки лазеров  на александрите и Ti:Sapphire светодиодами, излучающими в диапазоне 440—510 нм</article-title><trans-title-group xml:lang="en"><trans-title>Possibility of Pumping Alexandrite  and Ti:Sapphire Lasers with LED Emissions in the Range of 440–510 nm</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Аладов</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Aladov</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Санкт-Петербург</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><email xlink:type="simple">aaladov@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Закгейм</surname><given-names>А. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Zakgeim</surname><given-names>A. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Санкт-Петербург</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Иванов</surname><given-names>А. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Ivanov</surname><given-names>A. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Санкт-Петербург</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Черняков</surname><given-names>А. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Chernyakov</surname><given-names>A. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Санкт-Петербург</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>НТЦ микроэлектроники РАН</institution></aff><aff xml:lang="en"><institution>Submicron Heterostructures for Microelectronics, Research and Engineering Center of RAS</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>СПбГЭТУ “ЛЭТИ”</institution></aff><aff xml:lang="en"><institution>St. Petersburg Electrotechnical University “LETI”</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>27</day><month>04</month><year>2024</year></pub-date><volume>91</volume><issue>2</issue><fpage>204</fpage><lpage>210</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Аладов А.В., Закгейм А.Л., Иванов А.Е., Черняков А.Е., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Аладов А.В., Закгейм А.Л., Иванов А.Е., Черняков А.Е.</copyright-holder><copyright-holder xml:lang="en">Aladov A.V., Zakgeim A.L., Ivanov A.E., Chernyakov A.E.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/1521">https://zhps.ejournal.by/jour/article/view/1521</self-uri><abstract><p> Исследованы энергетические и спектральные характеристики наиболее мощных AlInGaN-светодиодов с максимумами спектра излучения на длинах волн 440, 470 и 510 нм применительно к накачке двух лазерных сред: Ti:Sapphire (Ti:Аl2O3) и александрит (Cr:Al2BeO4). Экспериментально исследованы коэффициенты поглощения излучения светодиодов в лазерных средах в зависимости от пиковой длины волны, режима работы, уровня возбуждения. Рассчитаны соответствующие значения спектрального согласования (эффективности поглощения излучения накачки) для различных комбинаций светодиодов и активных лазерных сред. Исследованы энергетические характеристики (мощность излучения, энергия в импульсе) светодиодных излучателей в широком диапазоне уровней возбуждения. Оценены предельные энергетические возможности светодиодных излучателей как по выходной оптической мощности, так и по КПД. Определены оптимальные комбинации светодиод—активная лазерная среда для достижения генерации.</p></abstract><trans-abstract xml:lang="en"><p>This work examines the energy and spectral characteristics of the most powerful modern AlInGaN LEDs with peak emission wavelengths of 440, 470, and 510 nm in relation to pumping two laser media: Ti:Sapphire (Ti:Al2O3) and alexandrite (Cr:Al2BeO4). The absorption coefficients of LED radiation in laser media have been experimentally studied depending on the peak wavelength, operating mode, and excitation level. The corresponding values of spectral matching (efficiency of absorption of pump radiation) are calculated for various combinations of LEDs and active laser media. The energy characteristics (radiation power, energy per pulse) of LED emitters in a wide range of excitation levels have been studied. The maximum energy capabilities have been assessed, both in terms of output optical power and efficiency. The optimal combinations of LED and active laser medium to achieve lasing have been determined.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>AlInGaN</kwd><kwd>светодиод</kwd><kwd>накачка</kwd><kwd>спектральное согласование</kwd><kwd>внешняя квантовая эффективность</kwd><kwd>Ti:Sapphire</kwd><kwd>александрит</kwd></kwd-group><kwd-group xml:lang="en"><kwd>AlInGaN</kwd><kwd>LED</kwd><kwd>pumping</kwd><kwd>spectral matching</kwd><kwd>external quantum efficiency</kwd><kwd>Ti:Sapphire</kwd><kwd>alexandrite</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">J. Walling, O. Peterson, H. Jenssen, R. Morris, E. O’Dell. IEEE J. Quantum Electron., 16, N 12 (1980) 1302—1315</mixed-citation><mixed-citation xml:lang="en">J. Walling, O. Peterson, H. Jenssen, R. Morris, E. O’Dell. IEEE J. 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