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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-1607</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СПЕКТРОСКОПИЯ НАНОСТРУКТУР</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>SPECTROSCOPY OF NANOSTRUCTURE</subject></subj-group></article-categories><title-group><article-title>Морфология и оптические характеристики нанопленок TiO2, выращенных атомно-слоевым осаждением на подложке из макропористого кремния</article-title><trans-title-group xml:lang="en"><trans-title>Morphology and Optical Characteristics of TiO2 Nanofilms Grown by Atomic Layer Deposition on a Macroporous Silicon Substrate</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Турдалиев</surname><given-names>Т. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Turdaliev</surname><given-names>T. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ташкент</p></bio><bio xml:lang="en"><p>Tashkent</p></bio><email xlink:type="simple">turdaliev@iplt.uz</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ашуров</surname><given-names>Х. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Ashurov</surname><given-names>K. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ташкент</p></bio><bio xml:lang="en"><p>Tashkent</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ашуров</surname><given-names>Р. Х.</given-names></name><name name-style="western" xml:lang="en"><surname>Ashurov</surname><given-names>R. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ташкент</p></bio><bio xml:lang="en"><p>Tashkent</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт ионно-плазменных и лазерных технологий имени У. А. Арифова АН Республики Узбекистан</institution></aff><aff xml:lang="en"><institution>U. A. Arifov Institute of Ion Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>01</day><month>08</month><year>2024</year></pub-date><volume>91</volume><issue>4</issue><fpage>534</fpage><lpage>539</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Турдалиев Т.К., Ашуров Х.Б., Ашуров Р.Х., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Турдалиев Т.К., Ашуров Х.Б., Ашуров Р.Х.</copyright-holder><copyright-holder xml:lang="en">Turdaliev T.K., Ashurov K.B., Ashurov R.K.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/1607">https://zhps.ejournal.by/jour/article/view/1607</self-uri><abstract><p>Описан процесс создания макропористой кремниевой подложки, на которую нанесен слой диоксида титана методом атомно-слоевого осаждения. Для формирования макропористой структуры подложки применен метод электрохимического травления. Осаждение TiO2 проведено с использованием установки SI PEALD. Морфология, структура и оптические свойства осажденной пленки TiO2 оценены с использованием сканирующей электронной микроскопии с функцией энергодисперсионной рентгеновской спектроскопии, спектральной эллипсометрии в диапазоне 240—1000 нм и спектроскопии комбинационного рассеяния (КР). В КР-спектрах выявлены пики 144, 194, 397, 639 см–1, характерные для одной из модификаций TiO2 — анатаза. На основе рассчитанных эллипсометрических параметров определены коэффициент поглощения и ширина оптической запрещенной зоны осажденной пленки.</p></abstract><trans-abstract xml:lang="en"><p>The process of creating a macroporous silicon substrate on which a layer of titanium dioxide is deposited using the atomic layer deposition method is described. To form a macroporous structure of the substrate, the method of electrochemical etching was used. TiO2 deposition was carried out using the SI PEALD setup. The morphology, structure and optical properties of the deposited TiO2 film were assessed using scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, spectral ellipsometry in the range of 240–1000 nm and Raman spectroscopy. The Raman spectra revealed peaks at 144, 194, 397, 639 cm–1, which is the characteristic of one of the modifications of TiO2 – anatase. Based on the calculated ellipsometric parameters, the absorption coefficient and the optical band gap of the deposited film were determined.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>пленка диоксида титана</kwd><kwd>анатаз</kwd><kwd>макропористый кремний</kwd><kwd>атомно-слоевое осаждение</kwd><kwd>сканирующая электронная микроскопия</kwd><kwd>спектральная эллипсометрия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>titanium dioxide film</kwd><kwd>anatase</kwd><kwd>macroporous silicon</kwd><kwd>atomic layer deposition</kwd><kwd>scanning electron microscopy</kwd><kwd>spectral ellipsometry</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">A. Garzon-Roman, C. Zúñiga-Islas, D. H. Cuate-Gomez. Silicon, 16 (2024) 61—71, https://doi.org/10.1007/s12633-023-02652-8</mixed-citation><mixed-citation xml:lang="en">A. Garzon-Roman, C. Zúñiga-Islas, D. H. Cuate-Gomez. 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