<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-1874</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>АННОТАЦИИ АНГЛОЯЗЫЧНЫХ СТАТЕЙ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ABSTRACTS ENGLISH-LANGUAGE ARTICLES</subject></subj-group></article-categories><title-group><article-title>Быстрое выявление дефектов в металлических компонентах аддитивного производства с помощью лазерно-искровой эмиссионной спектроскопии в сочетании с нейронной сетью обратного распространения и алгоритмом случайного леса</article-title><trans-title-group xml:lang="en"><trans-title>Rapid Identification of Defects in Metal Additive Manufacturing Components by LIBS Combined with BP-Neural Network and Random Forest Method</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Gao</surname><given-names>S.</given-names></name><name name-style="western" xml:lang="en"><surname>Gao</surname><given-names>S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цюаньчжоу, Фуцзянь</p></bio><bio xml:lang="en"><p>Shanping Gao</p><p>Quanzhou, Fujian</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Lin</surname><given-names>X.</given-names></name><name name-style="western" xml:lang="en"><surname>Lin</surname><given-names>X.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цюаньчжоу, Фуцзянь; Чанчунь, Цзилинь</p></bio><bio xml:lang="en"><p>Xiaomei Lin</p><p>Quanzhou, Fujian; Changchun, Jilin</p></bio><email xlink:type="simple">linxiaomei4427@163.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Huang</surname><given-names>Y.</given-names></name><name name-style="western" xml:lang="en"><surname>Huang</surname><given-names>Y.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цюаньчжоу, Фуцзянь</p></bio><bio xml:lang="en"><p>Yixiang Huang</p><p>Quanzhou, Fujian</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Chen</surname><given-names>Z.</given-names></name><name name-style="western" xml:lang="en"><surname>Chen</surname><given-names>Z.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цюаньчжоу, Фуцзянь</p></bio><bio xml:lang="en"><p>Zongxu Chen</p><p>Quanzhou, Fujian</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Chen</surname><given-names>H.</given-names></name><name name-style="western" xml:lang="en"><surname>Chen</surname><given-names>H.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цюаньчжоу, Фуцзянь</p></bio><bio xml:lang="en"><p>Huijin Chen</p><p>Quanzhou, Fujian</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Университет информационной инженерии Цюаньчжоу</institution></aff><aff xml:lang="en"><institution>Quanzhou University of Information Engineering</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Университет информационной инженерии Цюаньчжоу; Чанчуньский технологический университет</institution></aff><aff xml:lang="en"><institution>Quanzhou University of Information Engineering; Changchun University of Technology</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>20</day><month>05</month><year>2025</year></pub-date><volume>92</volume><issue>3</issue><fpage>414</fpage><lpage>414</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Gao S., Lin X., Huang Y., Chen Z., Chen H., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Gao S., Lin X., Huang Y., Chen Z., Chen H.</copyright-holder><copyright-holder xml:lang="en">Gao S., Lin X., Huang Y., Chen Z., Chen H.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/1874">https://zhps.ejournal.by/jour/article/view/1874</self-uri><abstract><p>Лазерно-искровая эмиссионная спектроскопия (LIBS) использована для быстрой идентификации дефектов в металлических компонентах аддитивного производства и контрольных групп без дефектов. По характеристическим эмиссионным линиям четырех элементов (Fe, Cr, Mn и Ti), выбранным из базы данных методом построения “случайного леса” (RF) классификационных деревьев, проведена классификация дефектов и бездефектных образцов методом k-ближайших соседей (KNN) и нейронной сетью с обратным распространением ошибки (BPNN). Сравнение эффективности классификации и результатов верификации моделей KNN, RF-KNN и RF-BPNN показало преимущество модели RF-BPNN, которая продемонстрировала в обучающем, тестовом и проверочном наборах наилучшую точность (99.4, 97.2 и 96.67% соответственно). Показано, что LIBS в сочетании с RF-BPNN можно использовать для обнаружения дефектов при 3D-печати металлических изделий.</p></abstract><trans-abstract xml:lang="en"><p>Rapid detection of defects in metal additive manufacturing (AM) components remains a challenge. In this paper, laser-induced breakdown spectroscopy (LIBS) technology was used to establish a rapid identification of metal AM defects and defect-free control groups. The corresponding spectral acquisition of metal AM components with defects and without defects was carried out, and the research elements (Fe, Cr, Mn, and Ti) and corresponding spectral lines were obtained in combination with the NIST database. The spectral lines with features of importance greater than the average value are selected by random forest (RF). The selected spectral lines were used as the input variables of the k-nearest neighbor (KNN) model and the backpropagation neural network (BPNN) model. The classification performance and verification results of KNN, RF-KNN, and RF-BPNN models were compared. The results showed that the RF-BPNN model exhibited the best accuracy, sensitivity, and specificity in the training set, test set and validation set, with accuracies of 99.4, 97.2, and 96.67%, respectively. This indicates that LIBS combined with RF-BPNN can be used for the detection of defects in metal AM components.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>лазерно-искровая эмиссионная спектроскопия</kwd><kwd>аддитивное производство</kwd><kwd>быстрая идентификация</kwd></kwd-group><kwd-group xml:lang="en"><kwd>laser-induced breakdown spectroscopy</kwd><kwd>additive manufacturing</kwd><kwd>rapid identification</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">This paper was supported by the National Natural Science Foundation of China (NSFC: 62405029), the Department of Science and Technology of Jilin Province of China (grant No. 20240302043GX), and the Department of Science and Technology of Jilin Province of China (grant No. YDZJ202401296ZYTS)</funding-statement><funding-statement xml:lang="en">This paper was supported by the National Natural Science Foundation of China (NSFC: 62405029), the Department of Science and Technology of Jilin Province of China (grant No. 20240302043GX), and the Department of Science and Technology of Jilin Province of China (grant No. YDZJ202401296ZYTS)</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">F. Calignano, D. Manfredi, E. P. Ambrosio, et al., Proc. IEEE, 105, No. 4, 593–612 (2017).</mixed-citation><mixed-citation xml:lang="en">F. Calignano, D. Manfredi, E. P. Ambrosio, et al., Proc. IEEE, 105, No. 4, 593–612 (2017).</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">A. N. Guojin, Modern Machinery, Issue 3 (2019).</mixed-citation><mixed-citation xml:lang="en">A. N. Guojin, Modern Machinery, Issue 3 (2019).</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">M. Dadkhah, M. H. Mosallanejad, L. Luliano, et al., Acta Metall. Sin. (Engl. Lett.), 34, 1173–1200 (2021), doi: 10.1007/s40195-021-01249-7.</mixed-citation><mixed-citation xml:lang="en">M. Dadkhah, M. H. Mosallanejad, L. Luliano, et al., Acta Metall. Sin. (Engl. Lett.), 34, 1173–1200 (2021), doi: 10.1007/s40195-021-01249-7.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">D. Gu, D. Dai, M Xia, et al., J. Nanjing University of Aeronautics &amp; Astronautics, 49, No. 5, 645–652 (2017).</mixed-citation><mixed-citation xml:lang="en">D. Gu, D. Dai, M Xia, et al., J. Nanjing University of Aeronautics &amp; Astronautics, 49, No. 5, 645–652 (2017).</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">H. Masuo, Y. Tanaka, S. Morokoshi, et al., Proc. Struct. Integrity, 7, 19–26 (2017), doi: 10.1016/j.prostr.2017.11.055.</mixed-citation><mixed-citation xml:lang="en">H. Masuo, Y. Tanaka, S. Morokoshi, et al., Proc. Struct. Integrity, 7, 19–26 (2017), doi: 10.1016/j.prostr.2017.11.055.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">D. S. Ertay, M. A. Naiel, M. Vlasea, et al., CIRP J. Manufacturing Science and Technology, 35, No. 2, 298–314 (2021), doi: 10.1016/j.cirpj.2021.06.015.</mixed-citation><mixed-citation xml:lang="en">D. S. Ertay, M. A. Naiel, M. Vlasea, et al., CIRP J. Manufacturing Science and Technology, 35, No. 2, 298–314 (2021), doi: 10.1016/j.cirpj.2021.06.015.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">J. Lee, H. J. Park, S. Chai, et al., Appl. Sciences, 11, No. 4, 1966 (2021), doi: 10.3390/app11041966.</mixed-citation><mixed-citation xml:lang="en">J. Lee, H. J. Park, S. Chai, et al., Appl. Sciences, 11, No. 4, 1966 (2021), doi: 10.3390/app11041966.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Z. Guo, P. Ni, Y. Dai, et al., J. Phys.: Conf. Ser., 1827, No. 1, 012039(1–7) (2021).</mixed-citation><mixed-citation xml:lang="en">Z. Guo, P. Ni, Y. Dai, et al., J. Phys.: Conf. Ser., 1827, No. 1, 012039(1–7) (2021).</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">W. Du, Q. Bai, Y. Wang, et al., Int. J. Adv. Manufacturing Technology, 95, 3185–3195 (2018).</mixed-citation><mixed-citation xml:lang="en">W. Du, Q. Bai, Y. Wang, et al., Int. J. Adv. Manufacturing Technology, 95, 3185–3195 (2018).</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">H. Rieder, A. Dillhöfer, M. Spies, et al., Proc. 11th Eur. Conf. Non-Destructive Testing, 1, 2194–2201 (2014).</mixed-citation><mixed-citation xml:lang="en">H. Rieder, A. Dillhöfer, M. Spies, et al., Proc. 11th Eur. Conf. Non-Destructive Testing, 1, 2194–2201 (2014).</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">D. W. Yee, M. L. Lifson, B. W. Edwards, et al., Adv. Materials, 31, No. 33, 1901345 (2019), doi: 10.1002/adma.201901345.</mixed-citation><mixed-citation xml:lang="en">D. W. Yee, M. L. Lifson, B. W. Edwards, et al., Adv. Materials, 31, No. 33, 1901345 (2019), doi: 10.1002/adma.201901345.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">R. Hama-Saleh, A. Weisheit, J. H. Schleifenbaum, et al., Proc. Manufacturing, 47, 1023–1028 (2020), doi: 10.1016/j.promfg.2020.04.317.</mixed-citation><mixed-citation xml:lang="en">R. Hama-Saleh, A. Weisheit, J. H. Schleifenbaum, et al., Proc. Manufacturing, 47, 1023–1028 (2020), doi: 10.1016/j.promfg.2020.04.317.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">S. Doshvarpassand, X. Wang, X. Zhao, Struct. Health Monitoring, 21, No. 2, 354–369 (2022), doi: 10.1177/1475921721999599.</mixed-citation><mixed-citation xml:lang="en">S. Doshvarpassand, X. Wang, X. Zhao, Struct. Health Monitoring, 21, No. 2, 354–369 (2022), doi: 10.1177/1475921721999599.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">C. Gu, Y. Lu, M. Chen, et al., Measurement, 187 (2022), doi: 10.1016/j.measurement.2021.110166</mixed-citation><mixed-citation xml:lang="en">C. Gu, Y. Lu, M. Chen, et al., Measurement, 187 (2022), doi: 10.1016/j.measurement.2021.110166</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">S. Felix, S. R. Majumder, H. K. Mathews, et al., Sci. Rep., 12, No. 1, 8503 (2022), doi: 10.1038/s41598022-12381-4.</mixed-citation><mixed-citation xml:lang="en">S. Felix, S. R. Majumder, H. K. Mathews, et al., Sci. Rep., 12, No. 1, 8503 (2022), doi: 10.1038/s41598022-12381-4.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">V. Detalle, X. Bai, Spectrochim. Acta B: At. Spectroscopy, 191, 106407 (2022), doi: 10.1016/j.sab.2022.106407.</mixed-citation><mixed-citation xml:lang="en">V. Detalle, X. Bai, Spectrochim. Acta B: At. Spectroscopy, 191, 106407 (2022), doi: 10.1016/j.sab.2022.106407.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">L. B. Guo, D. Zhang, L. X. Sun, et al., Front. Physics, 16, No. 2 (2021), doi: 10.1007/s11467-020-1007-z.</mixed-citation><mixed-citation xml:lang="en">L. B. Guo, D. Zhang, L. X. Sun, et al., Front. Physics, 16, No. 2 (2021), doi: 10.1007/s11467-020-1007-z.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Y. Zhang, T. Zhang, H. Li, Spectrochim. Acta B: At. Spectroscopy, 181, 106218 (2021), doi: 10.1016/j.sab.2021.106218.</mixed-citation><mixed-citation xml:lang="en">Y. Zhang, T. Zhang, H. Li, Spectrochim. Acta B: At. Spectroscopy, 181, 106218 (2021), doi: 10.1016/j.sab.2021.106218.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">D. A. Gonalves, G. S. Senesi, G. Nicolodelli, Trends Environ. Anal. Chem., 30C, e00121 (2021), doi: 10.1016/j.teac.2021.e00121.</mixed-citation><mixed-citation xml:lang="en">D. A. Gonalves, G. S. Senesi, G. Nicolodelli, Trends Environ. Anal. Chem., 30C, e00121 (2021), doi: 10.1016/j.teac.2021.e00121.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">K. Zhang, Z. Xu, F. Fang, Spectroscopy and Spectral Analysis, 41, No. 06 (2021), doi: 10.3964/j.issn.1000-0593(2021)06-1961-05.</mixed-citation><mixed-citation xml:lang="en">K. Zhang, Z. Xu, F. Fang, Spectroscopy and Spectral Analysis, 41, No. 06 (2021), doi: 10.3964/j.issn.1000-0593(2021)06-1961-05.</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">H. Kim, J. Lee, E. Srivastava, et al., Spectrochim. Acta B: At. Spectroscopy, 184, No. 7, 106282 (2021), doi: 10.1016/j.sab.2021.106282.</mixed-citation><mixed-citation xml:lang="en">H. Kim, J. Lee, E. Srivastava, et al., Spectrochim. Acta B: At. Spectroscopy, 184, No. 7, 106282 (2021), doi: 10.1016/j.sab.2021.106282.</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">P. A. Sdvizhenskii, V. N. Lednev, R. D. Asyutin, et al., J. Anal. At. Spectrometry, 35 (2020), doi: 10.1039/C9JA00343F.</mixed-citation><mixed-citation xml:lang="en">P. A. Sdvizhenskii, V. N. Lednev, R. D. Asyutin, et al., J. Anal. At. Spectrometry, 35 (2020), doi: 10.1039/C9JA00343F.</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">V. N. Lednev, P. A. Sdvizhenskii, R. Asyutin, et al., Opt. Express, 27, No. 4, 4612–4628 (2019), doi: 10.1364/OE.27.004612.</mixed-citation><mixed-citation xml:lang="en">V. N. Lednev, P. A. Sdvizhenskii, R. Asyutin, et al., Opt. Express, 27, No. 4, 4612–4628 (2019), doi: 10.1364/OE.27.004612.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
