zhpsЖурнал прикладной спектроскопииZhurnal Prikladnoii Spektroskopii0514-7506B. I. Stepanov Institute of Physics of the National Academy of Scienceszhps-2413Research ArticleСтатьиМетодика измерения квантовой эффективности высокочувствительных кремниевых фотоумножителейQuantum Efficiency Measuring Method for High-Sensitive Silicon PhotomultipliersМалютина-БронскаяВ. В.Malyutina-BronskayaV. V.

Минск

Minsk

malyutina@oelt.basnet.byСорокаС. А.SorokaS. A.

Минск

Minsk

НестеренокА. В.NestsiaronakA. V.

Минск

Minsk

ГНПО “Оптика, оптоэлектроника и лазерная техника”БеларусьSSPA “Optics, Optoelectronics and Laser Technology”Belarus202628092026935702709Copyright © Малютина-Бронская В.В., Сорока С.А., Нестеренок А.В., 20262026Малютина-Бронская В.В., Сорока С.А., Нестеренок А.В.Malyutina-Bronskaya V.V., Soroka S.A., Nestsiaronak A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://zhps.ejournal.by/jour/article/view/2413

Рассмотрены физические и технические аспекты реализации метода измерения абсолютной спектральной характеристики и эффективности регистрации фотонов высокочувствительных кремниевых фотоумножителей (Si-ФЭУ) с использованием лазерных источников излучения. Предложенная методика учитывает вклад заряда времякоррелированной оптической помехи (K) и позволяет с высокой точностью измерять параметры Si-ФЭУ. Методика апробирована на корпусированных  Si-ФЭУ: S13360-1350CS (Hamamatsu, Япония) (использован как эталон) и КОФ-1350 (ОАО “ИНТЕГРАЛ”, Беларусь). Размеры единичного пикселя данных Si-ФЭУ составляют 5050 мкм, площадь светочувствительной области 1.7 мм2. Для Si-ФЭУ КОФ-1350 установлено, что с ростом перенапряжения от 3 до 5 В коэффициент K быстро увеличивается от 0.19 до 0.43.

This paper examines the physical and technical aspects of implementing a method for measuring the absolute spectral response and photon detection efficiency (PDE) of highly sensitive silicon photomultipliers (SiPMs) using laser radiation sources. The proposed method takes into account the contribution of the charge of time-correlated optical interference and enables high-precision measurement of SiPM parameters. The results of testing by this method are presented using packaged SiPMs, one of which of the S13360-1350CS type from “Hamamatsu” (Japan), has been used as a standard of comparison, and another one is KОF 1350  (JSC “INTEGRAL”, Belarus). These SiPMs have single pixel dimensions of 5050 μm and a light-sensitive area of approximately 1.7 mm2. For the KOF-1350 SiPM, it was found that with an increase in overvoltage from 3 to 5 V, the coefficient K quickly increases from 0.19 to 0.43.

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The authors declare that there are no conflicts of interest present.