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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-251</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ФОТОЛЮМИНЕСЦЕНЦИЯ НАНОКОМПОЗИТОВ ZnO/C, СФОРМИРОВАННЫХ ЗОЛЬ-ГЕЛЬ МЕТОДОМ</article-title><trans-title-group xml:lang="en"><trans-title>PHOTOLUMINESCENCE OF ZnO/C NANOCOMPOSITES FORMED BY THE SOL-GEL METHOD</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Денисов</surname><given-names>Н. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Denisov</surname><given-names>N. M.</given-names></name></name-alternatives><email xlink:type="simple">waefae@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Чубенко</surname><given-names>Е. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Chubenko</surname><given-names>E. B.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шевцова</surname><given-names>Т. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Shevtsova</surname><given-names>T. A.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бондаренко</surname><given-names>В. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Bondarenko</surname><given-names>V. P.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Борисенко</surname><given-names>В. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Borisenko</surname><given-names>V. E.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>10</day><month>03</month><year>2020</year></pub-date><volume>85</volume><issue>3</issue><fpage>413</fpage><lpage>418</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Денисов Н.М., Чубенко Е.Б., Шевцова Т.А., Бондаренко В.П., Борисенко В.Е., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Денисов Н.М., Чубенко Е.Б., Шевцова Т.А., Бондаренко В.П., Борисенко В.Е.</copyright-holder><copyright-holder xml:lang="en">Denisov N.M., Chubenko E.B., Shevtsova T.A., Bondarenko V.P., Borisenko V.E.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/251">https://zhps.ejournal.by/jour/article/view/251</self-uri><abstract><p>Пленки нелегированного оксида цинка (ZnO) и нанокомпозита ZnO/C сформированы золь-гель методом на стеклянных подложках и стеклоткани с использованием в качестве прекурсора ацетата цинка и добавлением в него хлорида цинка соответственно. Анализ спектров фотолюминесценции пленок ZnO/C при высоком (N2-лазер) и низком (HeCd-лазер) уровнях возбуждения позволил установить определяющую роль связанных экситонов в этом процессе при температурах 20-60 К, что обусловлено присутствием остатков хлора в пленках. С повышением температуры до 300 К в фотолюминесценции пленок ZnO/C начинает преобладать роль рекомбинации через 1LO- и 2LO-фононные реплики уровня свободных экситонов и примесно-дефектные уровни. </p></abstract><trans-abstract xml:lang="en"><p>Films of undoped ZnO and of ZnO/C nanocomposite were formed by the sol-gel method on glass substrates and on fiberglass using zinc acetate as a precursor and adding zinc chloride into it, respectively. Analysis of the photoluminescence spectra of ZnO/C films at high (N2-laser) and low (HeCd-laser) excitation levels made it possible to establish the defining role of bound excitons in the photoluminescence at 20-60 K, due to the presence of chlorine residues in the films. With the temperature increase to 300 K the role of recombination through 1LO- and 2LO-phonon replicas of free exciton levels and impurity levels begins to dominate in photoluminescence of ZnO/C films. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>оксид цинка</kwd><kwd>углерод</kwd><kwd>нанокомпозит</kwd><kwd>золь-гель метод</kwd><kwd>фотолюминесценция</kwd><kwd>zinc oxide</kwd><kwd>carbon</kwd><kwd>nanocomposite</kwd><kwd>sol-gel method</kwd><kwd>photoluminescence</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">A. Janotti, C. G. V. de Walle. Rep. Prog. Phys., 72, N 12 (2009) 126501-1-126501-29</mixed-citation><mixed-citation xml:lang="en">A. Janotti, C. G. V. de Walle. Rep. Prog. Phys., 72, N 12 (2009) 126501-1-126501-29</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">A. B. 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