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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-380</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>КРАТКИЕ СООБЩЕНИЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>BRIEF COMMUNICATIONS</subject></subj-group></article-categories><title-group><article-title>ЭЛЕКТРОННЫЙ ПАРАМАГНИТНЫЙ РЕЗОНАНС ИОНОВ Mn2+ В НАНОРАЗМЕРНОМ СУЛЬФИДЕ ЦИНКА С ПЛАНАРНЫМ ДЕФЕКТОМ РЕШЕТКИ</article-title><trans-title-group xml:lang="en"><trans-title>EPR OF Mn2+ IN NANO-SIZED ZINC SULFIDE WITH PLANAR LATTICE DEFECT</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ворона</surname><given-names>И. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Vorona</surname><given-names>I. P.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ищенко</surname><given-names>С. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Ishchenko</surname><given-names>S. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Грачев</surname><given-names>В. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Grachev</surname><given-names>V. G.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Баран</surname><given-names>Н. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Baran</surname><given-names>N. P.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Окулов</surname><given-names>С. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Okulov</surname><given-names>S. M.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Носенко</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Nosenko</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">vvnosenko@ukr.net</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Селищев</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Selishchev</surname><given-names>A. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт физики полупроводников им. В. Е. Лашкарева НАН Украины</institution></aff><aff xml:lang="en"><institution>V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Университет штата Монтана</institution></aff><aff xml:lang="en"><institution>Montana State University</institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Технический университет Хемница</institution></aff><aff xml:lang="en"><institution>Chemnitz University of Technology</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>10</day><month>03</month><year>2020</year></pub-date><volume>86</volume><issue>1</issue><fpage>146</fpage><lpage>150</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Ворона И.П., Ищенко С.С., Грачев В.Г., Баран Н.П., Окулов С.М., Носенко В.В., Селищев А.В., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Ворона И.П., Ищенко С.С., Грачев В.Г., Баран Н.П., Окулов С.М., Носенко В.В., Селищев А.В.</copyright-holder><copyright-holder xml:lang="en">Vorona I.P., Ishchenko S.S., Grachev V.G., Baran N.P., Okulov S.M., Nosenko V.V., Selishchev A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/380">https://zhps.ejournal.by/jour/article/view/380</self-uri><abstract><p>Изучен ЭПР ионов Mn2+ в трех образцах кубического нано-ZnS, различающихся технологией получения и размерами наночастиц. Марганец находится в образцах как неконтролируемая примесь. Спектры ЭПР могут быть описаны двумя компонентами - спектром иона Mn2+ в кубическом окружении (Mn2+ (С)) с параметрами g = 2.0022 ± 0.0002, A = (-63.5 ± 0.5) ×10- 4  cм- 1  , b40 ³3.5 ×10- 4  cм- 1  , и спектром иона Mn2+, ассоциированного с планарным решеточным дефектом упаковки (Мn2+(Д)), с параметрами g = 2.0022 ± 0.0002, A = (-63.5 ± 0.5) × 10- 4  cм- 1  , b20 = (-36 ± 1) × 10- 4  cм- 1  . Соотношение количества центров Mn2+ (С)/Mn2+(Д) 2.1:1 для образца 1 и 1.7:1 для образцов 2 и 3. Планарные дефекты упаковки являются характерными решеточными дефектами кубического нано-ZnS. ЭПР ионов Mn2+ позволяет контролировать их наличие. </p></abstract><trans-abstract xml:lang="en"><p>EPR of Mn2+ ions in three cubic nano-ZnS samples was studied. The samples were obtained by different technological processes and the sized of nanoparticles were different. Manganese was in the samples as an uncontrolled impurity. The EPR spectra of all samples can be described by two components - the spectrum of Mn2+ in the cubic surrounding, Mn2+ (C), with the parameters g = 2.0022 ± 0.0002,A = (-63.5 ± 0.5)´10-4 cm-1 , b40 ³ 3.5´10- 4  cm- 1  and the spectrum of Mn2+ ion associated with planar lattice defect of the packaging, Mn2+ (D). The parameters of Mn2+ (D) spectrum are: g = 2.0022±0.0002, A = (-63.5±0.5)´10- 4  cm- 1  , b20 = = (-36±1)´10- 4  cm- 1  . The ratio of centers amount Mn2+ (C)/Mn2+ (D) for the samples studied was 2.1:1 (sample 1) and 1.7:1 (samples 2 and 3). Planar packing defects are typical lattice defects in cubic nano-ZnS. EPR of Mn2+ allows one to monitor the presence of these defects. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>ЭПР</kwd><kwd>ZnS</kwd><kwd>структура решетки</kwd><kwd>планарный решеточный дефект упаковки</kwd><kwd>EPR</kwd><kwd>ZnS</kwd><kwd>lattice structure</kwd><kwd>planar lattice defect of packing</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Jr. M. Bruchez, M. Moronne, P. Gin, S. Weiss, A. P. Alivisatos. Science, 281 (1998) 2013-2016</mixed-citation><mixed-citation xml:lang="en">Jr. M. Bruchez, M. Moronne, P. Gin, S. Weiss, A. P. Alivisatos. Science, 281 (1998) 2013-2016</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">B. T. Luong, E. Hyeong, S. Yoon, J. Choi, N. Kim. RSC Adv., 3 (2013) 23395-23401</mixed-citation><mixed-citation xml:lang="en">B. T. Luong, E. Hyeong, S. Yoon, J. 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