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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">zhps-694</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>РОСТ, СТРУКТУРА И ТЕМПЕРАТУРНАЯ ЗАВИСИМОСТЬ ШИРИНЫ ЗАПРЕЩЕННОЙ ЗОНЫ МОНОКРИСТАЛЛОВ Mn0.3Ag0.7In4.1S6.8</article-title><trans-title-group xml:lang="en"><trans-title>GROWTH, STRUCTURE, AND TEMPERATURE DEPENDENCE OF THE BAND GAP OF Mn0.3Ag0.7In4.1S6.8 SINGLE CRYSTALS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Боднарь</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Bodnar</surname><given-names>I. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>220013, Минск</p></bio><bio xml:lang="en"><p>Minsk, 220013</p></bio><email xlink:type="simple">chemzav@bsuir.by</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Павловский</surname><given-names>В. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Pavlovskii</surname><given-names>V. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>220072, Минск</p></bio><bio xml:lang="en"><p>Minsk, 220072</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Свитенков</surname><given-names>И. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Svitsiankou</surname><given-names>I. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>220072, Минск</p></bio><bio xml:lang="en"><p>Minsk, 220072</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Яблонский</surname><given-names>Г. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Yablonskii</surname><given-names>G. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>220072, Минск</p></bio><bio xml:lang="en"><p>Minsk, 220072</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Институт физики НАН Беларуси</institution></aff><aff xml:lang="en"><institution>B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2020</year></pub-date><pub-date pub-type="epub"><day>30</day><month>10</month><year>2020</year></pub-date><volume>87</volume><issue>5</issue><fpage>741</fpage><lpage>745</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Боднарь И.В., Павловский В.Н., Свитенков И.Е., Яблонский Г.П., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Боднарь И.В., Павловский В.Н., Свитенков И.Е., Яблонский Г.П.</copyright-holder><copyright-holder xml:lang="en">Bodnar I.I., Pavlovskii V.N., Svitsiankou I.E., Yablonskii G.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/694">https://zhps.ejournal.by/jour/article/view/694</self-uri><abstract><p>Направленной кристаллизацией расплава выращены монокристаллы Mn0.3Ag0.7In4.1S6.8, определен их состав и кристаллическая структура. Установлено, что монокристаллы Mn0.3Ag0.7In4.1S6.8 кристаллизуются в кубической структуре шпинели. По спектрам пропускания в области края фундаментального поглощения в интервале температур 20—320 К оценена ширина запрещенной монокристаллов и построена ее температурная зависимость. Показано, что зависимость ширины запрещенной зоны от температуры имеет вид, характерный для полупроводниковых материалов.</p></abstract><trans-abstract xml:lang="en"><p>Mn0.3Ag0.7In4.1S6.8 single crystals were grown by directed melt crystallization, their composition and crystal structure were determined. It was established that the single crystals Mn0.3Ag0.7In4.1S6.8 crystallize in a cubic spinel structure. The band gap of the single crystals was estimated from the transmission spectra in the region of the fundamental absorption edge in the temperature range of 20–320 K, and its temperature dependence was constructed. It was shown that the temperature dependence of the band gap has the form characteristic for semiconductor materials.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>метод Бриджмена</kwd><kwd>кубическая структура</kwd><kwd>параметр элементарной ячейки</kwd><kwd>спектр пропускания</kwd><kwd>ширина запрещенной зоны</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Bridgman method</kwd><kwd>cubic structure</kwd><kwd>unit cell parameter</kwd><kwd>transmission spectra</kwd><kwd>band gap</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">A. Kenichi, O. Tadashi, N. Ichiro. Sci. Eng. Rev. Doshisha Univ., 34, N 2 (1993) 142—152</mixed-citation><mixed-citation xml:lang="en">A. Kenichi, O. Tadashi, N. Ichiro. Sci. Eng. Rev. Doshisha Univ., 34, N 2 (1993) 142—152</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">G. Delgado, A. J. Mora, C. Pineda, T. Tinoco. Mater. Res. Bull., 36, N 13 (2001) 2507—2517</mixed-citation><mixed-citation xml:lang="en">G. Delgado, A. J. Mora, C. Pineda, T. Tinoco. Mater. Res. Bull., 36, N 13 (2001) 2507—2517</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь, В. Ф. Гременок, В. Ю. Рудь, Ю. В. Рудь. ФТП, 33, № 7 (1999) 805—809</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь, В. Ф. Гременок, В. Ю. Рудь, Ю. В. Рудь. ФТП, 33, № 7 (1999) 805—809</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь, Е. А. Кудрицкая, И. К. Полушина, В. Ю. Рудь, Ю. В. Рудь. ФТП, 32, № 9 (1998) 1043—1046</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь, Е. А. Кудрицкая, И. К. Полушина, В. Ю. Рудь, Ю. В. Рудь. ФТП, 32, № 9 (1998) 1043—1046</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">А. В. Ведяев. УФН, 172, № 12 (2002) 1458—1461</mixed-citation><mixed-citation xml:lang="en">А. В. Ведяев. УФН, 172, № 12 (2002) 1458—1461</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">З. Метфессель, Д. Маттис. Магнитные полупроводники, Москва, Мир (1972)</mixed-citation><mixed-citation xml:lang="en">З. Метфессель, Д. Маттис. Магнитные полупроводники, Москва, Мир (1972)</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">I. V. Bodnar, I. A. Victorov, V. M. Dabranski, M. A. Osipova. Phys. Status Solidi (c), 6, N 5 (2009) 1130—1132</mixed-citation><mixed-citation xml:lang="en">I. V. Bodnar, I. A. Victorov, V. M. Dabranski, M. A. Osipova. Phys. Status Solidi (c), 6, N 5 (2009) 1130—1132</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">В. Ю. Рудь, Ю. В. Рудь, М. А. Осипова, И. В. Боднарь. ФТП, 44, № 1 (2010) 48—52</mixed-citation><mixed-citation xml:lang="en">В. Ю. Рудь, Ю. В. Рудь, М. А. Осипова, И. В. Боднарь. ФТП, 44, № 1 (2010) 48—52</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь, В. Ю. Рудь, Ю. В. Рудь. ФТП, 43, № 11 (2009) 1549—1552</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь, В. Ю. Рудь, Ю. В. Рудь. ФТП, 43, № 11 (2009) 1549—1552</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Ю. И. Уханов. Оптические свойства полупроводников, Москва, Наука (1977)</mixed-citation><mixed-citation xml:lang="en">Ю. И. Уханов. Оптические свойства полупроводников, Москва, Наука (1977)</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">С. И. Рембеза. Методы измерения основных параметров полупроводников, Воронеж, ВГУ (1989)</mixed-citation><mixed-citation xml:lang="en">С. И. Рембеза. Методы измерения основных параметров полупроводников, Воронеж, ВГУ (1989)</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Р. Уиллардсон. Оптические свойства полупроводников, Москва, Мир (1970)</mixed-citation><mixed-citation xml:lang="en">Р. Уиллардсон. Оптические свойства полупроводников, Москва, Мир (1970)</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь. ФТП, 49, № 5 (2015) 596—598</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь. ФТП, 49, № 5 (2015) 596—598</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">S. Levchenko, D. Dumcenco, Y. P. Wang, Y. S. Huang, C. H. Ho, E. Arushanov, V. Tezlevan, K. K. Tiong. Opt. Mater., 34, N 8 (2012) 1362—1365</mixed-citation><mixed-citation xml:lang="en">S. Levchenko, D. Dumcenco, Y. P. Wang, Y. S. Huang, C. H. Ho, E. Arushanov, V. Tezlevan, K. K. Tiong. Opt. Mater., 34, N 8 (2012) 1362—1365</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">I. V. Bodnar, I. T. Bodnar, V. F. Gremenok, A. M. Kovalchuk, M. Leon. J. Cryst. Growth, 293, N 2 (2006) 324—329</mixed-citation><mixed-citation xml:lang="en">I. V. Bodnar, I. T. Bodnar, V. F. Gremenok, A. M. Kovalchuk, M. Leon. J. Cryst. Growth, 293, N 2 (2006) 324—329</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
