<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">zhps</journal-id><journal-title-group><journal-title xml:lang="ru">Журнал прикладной спектроскопии</journal-title><trans-title-group xml:lang="en"><trans-title>Zhurnal Prikladnoii Spektroskopii</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0514-7506</issn><publisher><publisher-name>B. I. Stepanov Institute of Physics of the National Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.47612/0514-7506-2021-88-6-967-969</article-id><article-id custom-type="elpub" pub-id-type="custom">zhps-946</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Фотоэлектрические свойства монокристаллов MnIn2S4</article-title><trans-title-group xml:lang="en"><trans-title>Photoelectric properties of MnIn2S4 single crystals</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Нифтиев</surname><given-names>Н. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Niftiyev</surname><given-names>N. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Баку </p></bio><bio xml:lang="en"><p>Baku</p></bio><email xlink:type="simple">namiq7@bk.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Азербайджанский государственный педагогический университет</institution></aff><aff xml:lang="en"><institution>Azerbaijan State Pedagogical University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>29</day><month>11</month><year>2021</year></pub-date><volume>88</volume><issue>6</issue><fpage>967</fpage><lpage>969</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Нифтиев Н.Н., 2021</copyright-statement><copyright-year>2021</copyright-year><copyright-holder xml:lang="ru">Нифтиев Н.Н.</copyright-holder><copyright-holder xml:lang="en">Niftiyev N.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://zhps.ejournal.by/jour/article/view/946">https://zhps.ejournal.by/jour/article/view/946</self-uri><abstract><p>Исследованы спектральное распределение фотопроводимости и температурная зависимость фототока монокристаллов MnIn2S4. В спектре фотопроводимости выявлены собственная, примесная фотопроводимость и максимум при энергии 2.69 эВ, который связан с внутрицентровым переходом ионов Mn2+ (6А1®А1). Область длин волн 600—1000 нм проявляется с избытком марганца в кристаллах и обусловлена донорным дефектом. При изменении температуры от 80 до 145 К рост фототока связан с термическим опустошением уровней прилипания. Определена энергия активации уровней прилипания. </p></abstract><trans-abstract xml:lang="en"><p>The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1®4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined. </p></trans-abstract><kwd-group xml:lang="ru"><kwd>MnIn2S4</kwd><kwd>монокристалл</kwd><kwd>спектральное распределение</kwd><kwd>фотопроводимость</kwd><kwd>фототок</kwd><kwd>энергия активации</kwd></kwd-group><kwd-group xml:lang="en"><kwd>MnIn2S4</kwd><kwd>single crystal</kwd><kwd>spectral distribution</kwd><kwd>photoconductivity</kwd><kwd>photocurrent</kwd><kwd>activation energy</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">T. Kanomato, H. Ido, T. Kaneko. Jpn. J. Phys., 34 (1973) 554</mixed-citation><mixed-citation xml:lang="en">T. Kanomato, H. Ido, T. Kaneko. Jpn. J. Phys., 34 (1973) 554</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">I. Ching, J. John, A. Edgar, W. Aaron. J. Solid State Chem., 13 (1975) 304—306</mixed-citation><mixed-citation xml:lang="en">I. Ching, J. John, A. Edgar, W. Aaron. J. Solid State Chem., 13 (1975) 304—306</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">N. N. Niftiev, O. B. Tagiyev. Solid State Commun., 81, N 8 (1992) 693—695</mixed-citation><mixed-citation xml:lang="en">N. N. Niftiev, O. B. Tagiyev. Solid State Commun., 81, N 8 (1992) 693—695</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Н. Н. Нифтиев. ФТП, 36, № 7 (2002) 836—837</mixed-citation><mixed-citation xml:lang="en">Н. Н. Нифтиев. ФТП, 36, № 7 (2002) 836—837</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">N. N. Niftiev. Solid State Commun., 92, N 9 (1994) 781—783</mixed-citation><mixed-citation xml:lang="en">N. N. Niftiev. Solid State Commun., 92, N 9 (1994) 781—783</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь, В. Ю. Рудь, Ю.В. Рудь. ФТП, 43, № 11 (2009) 1549—1552</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь, В. Ю. Рудь, Ю.В. Рудь. ФТП, 43, № 11 (2009) 1549—1552</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь. Журн. неорг. химии, 55, № 6 (2010) 896—901</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь. Журн. неорг. химии, 55, № 6 (2010) 896—901</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">И. В. Боднарь, В. Ю. Рудь, Ю. В. Рудь, Д. В. Ложкин. ФТП, 45, № 7 (2011) 941—946</mixed-citation><mixed-citation xml:lang="en">И. В. Боднарь, В. Ю. Рудь, Ю. В. Рудь, Д. В. Ложкин. ФТП, 45, № 7 (2011) 941—946</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">S. Lei, K. Tang, Z. Fang, Y. Qi, H. Zheng. Mater. Res. Bull., 41, N 12 (2006) 2325—2333</mixed-citation><mixed-citation xml:lang="en">S. Lei, K. Tang, Z. Fang, Y. Qi, H. Zheng. Mater. Res. Bull., 41, N 12 (2006) 2325—2333</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">N. Tsuboi, K. Ogihara, Y. Suda, K. Oishi. Jpn. J. Appl. Phys., 44 (2005) 725—728</mixed-citation><mixed-citation xml:lang="en">N. Tsuboi, K. Ogihara, Y. Suda, K. Oishi. Jpn. J. Appl. Phys., 44 (2005) 725—728</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">А. Н. Георгобиани, С. И. Радауцан, И. М. Тигиняну. ФТП, 19, № 2 (1985) 193—212</mixed-citation><mixed-citation xml:lang="en">А. Н. Георгобиани, С. И. Радауцан, И. М. Тигиняну. ФТП, 19, № 2 (1985) 193—212</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">A. N. Georgobiani, A. N. Gruzintsev, S. I. Radautsan, I. M. Tiginyanu. Phys. Status Solidi (a), 80 (1983) 45—48</mixed-citation><mixed-citation xml:lang="en">A. N. Georgobiani, A. N. Gruzintsev, S. I. Radautsan, I. M. Tiginyanu. Phys. Status Solidi (a), 80 (1983) 45—48</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Р. Бьюб. Фотопроводимость твердых тел, Mосква, Мир (1962)</mixed-citation><mixed-citation xml:lang="en">Р. Бьюб. Фотопроводимость твердых тел, Mосква, Мир (1962)</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
