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Electrical Characteristics of p-i-n Mesa-Photodiodes Based on InGaAs/InP Heterostructures
Abstract
The current-voltage and capacitance-voltage characteristics of InGaAs/InP heterostructure p-i-n photodiodes fabricated by mesa technology have been studied. Photodiodes of circular configuration differ in active region diameter from 0.05 to 2.5 mm. All measurements are performed in the dark at room temperature using the probe method on a wafer with ready-made devices. Data are obtained on dark currents (leakage currents), Idark, which are interpreted in terms of the surface and bulk currents in p-i-n photodiodes of various sizes. In the absorbing layer of the InGaAs/InP photodiode heterostructures, the concentration profiles ND(x) are assessed for the first time by the non-destructive CV method and are compared with the electrochemical profiling data. It is shown that for the most part of the heterostructure i-layer both methods are complementary.
About the Authors
I. Gogorishvili
LEPL Institute of Micro and Nanoelectronics
Georgia
Georgia
Tbilisi
A. Tutunjyan
LEPL Institute of Micro and Nanoelectronics; Institute of Applied Semiconductor Technology of Iv. Javakhishvili Tbilisi State University
Georgia
Georgia
Tbilisi
T. Sakharova
LEPL Institute of Micro and Nanoelectronics; Institute of Applied Semiconductor Technology of Iv. Javakhishvili Tbilisi State University
Georgia
Georgia
Tbilisi
M. Melikyan
LEPL Institute of Micro and Nanoelectronics
Georgia
Georgia
Tbilisi
N. Khuchua
LEPL Institute of Micro and Nanoelectronics; Institute of Applied Semiconductor Technology of Iv. Javakhishvili Tbilisi State University
Georgia
Georgia
Tbilisi
D. Kuparashvili
LEPL Institute of Micro and Nanoelectronics
Georgia
Georgia
Tbilisi
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Review
For citations:
Gogorishvili I., Tutunjyan A., Sakharova T., Melikyan M., Khuchua N., Kuparashvili D. Electrical Characteristics of p-i-n Mesa-Photodiodes Based on InGaAs/InP Heterostructures. Zhurnal Prikladnoii Spektroskopii. 2024;91(2):302-307. (In Russ.)
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