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PHOTOTHERMOACOUSTIC TRANSFORMATION OF A KUMMER–GAUSSIAN LIGHT BEAM IN SEMICONDUCTOR SENSOR STRUCTURES ON THE BASIS OF CdTe

Abstract

We theoretically and experimentally investigated the process of laser photothermoacoustic transformation in sensor semiconductor structures. We obtained the expression for a pressure pulse describing the evolution of an ultrasonic response excited by a nanosecond laser pulse with a Kummer-Gaussian intensity distribution. The possibility of effective control of the process of photothermoacoustic transformation of laser pulses in semiconductor structures used for creating highly sensitive detectors of ionizing radiation was experimentally demonstrated.

About the Authors

G. S. Mityurich
F. Skorina Gomel State University
Belarus
Gomel, 246019


V. P. Veleshchuk
V. E. Lashkarev Institute of Semiconductor Physics of National Academy of the Sciences of Ukraine
Ukraine
Kiev, 03028


S. S. Girgel
F. Skorina Gomel State University
Belarus
Gomel, 246019


E. V. Lebedeva
Belarusian Trade and Economic University Consumer Cooperatives
Belarus
Gomel, 246029


A. I. Vlasenko
V. E. Lashkarev Institute of Semiconductor Physics of National Academy of the Sciences of Ukraine
Ukraine
Kiev, 03028


S. N. Levitskiy
V. E. Lashkarev Institute of Semiconductor Physics of National Academy of the Sciences of Ukraine
Ukraine

Kiev, 03028



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Review

For citations:


Mityurich G.S., Veleshchuk V.P., Girgel S.S., Lebedeva E.V., Vlasenko A.I., Levitskiy S.N. PHOTOTHERMOACOUSTIC TRANSFORMATION OF A KUMMER–GAUSSIAN LIGHT BEAM IN SEMICONDUCTOR SENSOR STRUCTURES ON THE BASIS OF CdTe. Zhurnal Prikladnoii Spektroskopii. 2020;87(4):672-676. (In Russ.)

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ISSN 0514-7506 (Print)