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STRUCTURAL CHARACTERISTICS AND PHOTOLUMINESCENCE OF THIN FILMS OF Cu(In1–xGax)(SySe1–y)2SOLID SOLUTIONS
Abstract
Phase composition, structural and optical characteristics of thin films of Cu(In1–xGax)(SуSe1-y)2 solid solutions with a chalcopyrite structure were investigated. According to the data of X-ray diffraction analysis the unit cell parameters were a ~ 5.720 Å and c ~ 11.52 Å, and the elemental compositions were x = Ga/(Ga+ In) ~ 0.14 and y = S/(S + Se) ~ 0.11 for Cu(In1–xGax)(SуSe1-y)2 thin films. Optical band gap of Cu(In1–xGax)(SуSe1-y)2 solid solutions was determined from the measurements of photoluminescence spectra and luminescence excitation spectra at a temperature of ~4.2 K and appeared to be equal ~ 1.122 eV. Mechanism of radiative recombination of nonequilibrium charge carriers in thin films of Cu(In1–xGax)(SуSe1-y)2 solid solutions is discussed.
About the Authors
O. M. Borodavchenko
Scientific-Practical Material Research Centre of the National Academy of Sciences of Belarus
Belarus
Minsk, 220072
Belarus
Minsk, 220072
V. D. Zhivulko
Scientific-Practical Material Research Centre of the National Academy of Sciences of Belarus
Belarus
Minsk, 220072
Belarus
Minsk, 220072
A. V. Mudryi
Scientific-Practical Material Research Centre of the National Academy of Sciences of Belarus
Belarus
Minsk, 220072
Belarus
Minsk, 220072
I. A. Mogilnikov
M. N. Mikheev Institute of Metal Physics of the Ural Branch of Russian Academy of Sciences
Russian Federation
Russian Federation
Ekaterinburg, 620108
M. V. Yakushev
M. N. Mikheev Institute of Metal Physics of the Ural Branch of Russian Academy of Sciences;
Ural Federal University
Russian Federation
Russian Federation
Ekaterinburg, 620108;
Ekaterinburg, 620002
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Review
For citations:
Borodavchenko O.M., Zhivulko V.D., Mudryi A.V., Mogilnikov I.A., Yakushev M.V. STRUCTURAL CHARACTERISTICS AND PHOTOLUMINESCENCE OF THIN FILMS OF Cu(In1–xGax)(SySe1–y)2SOLID SOLUTIONS. Zhurnal Prikladnoii Spektroskopii. 2021;88(1):34-40. (In Russ.)
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