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IR Transmittance of Si/SiO2/Si3N4/Si Island Structures Formed by Selective Laser Annealing
https://doi.org/10.47612/0514-7506-2022-89-4-511-518
Abstract
Periodic Si/SiO2/Si3N4/Si structures with an insular surface layer were formed by selective laser annealing. The study by infrared Fourier spectrometry showed a decrease in the transmittance of the island structure formed by selective laser annealing compared to the structure without annealing in range 2–25 microns. It is shown that the decrease in the transmittance value may be due to the presence of highly alloyed regions of recrystallized silicon in the surface layer. Analysis of dispersion curves obtained by FDTD modeling showed that plasma-like oscillations were detected in the range of 5–20 THz, which can support in layers of periodic high-alloyed silicon islands in a layer of unalloyed silicon. The results of the study are interpreted considering the assumption of the occurrence of “spoof” surface plasmons in a structure with an insular surface layer.
About the Authors
A. I. Mukhammad
Belarusian State University
Belarus
Belarus
Minsk
P. I. Gaiduk
Belarusian State University
Belarus
Belarus
Minsk
O. Yu. Nalivaiko
JSC “INTEGRAL” — “INTEGRAL” Holding Managing Company
Belarus
Belarus
Minsk
V. V. Kolos
JSC “INTEGRAL” — “INTEGRAL” Holding Managing Company
Belarus
Belarus
Minsk
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Review
For citations:
Mukhammad A.I., Gaiduk P.I., Nalivaiko O.Yu., Kolos V.V. IR Transmittance of Si/SiO2/Si3N4/Si Island Structures Formed by Selective Laser Annealing. Zhurnal Prikladnoii Spektroskopii. 2022;89(4):511-518. (In Russ.) https://doi.org/10.47612/0514-7506-2022-89-4-511-518
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