PHOTOLUMINESCENCE PROPERTIES OF b-Ga2O3 THIN FILMS PRODUCED BY ION-PLASMA SPUTTERING

Abstract

Photoexcitation and photoluminescence spectra of b-Ga₂O₃ thin films obtained by high-frequency ion-plasmous sputtering in an argon atmosphere were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. The nature of the two intense bands with maxima at 2.95 and 3.14 eV, as well as two low-intensity bands with maxima at 3.90 and 4.25 eV was discussed. The intense bands were attributed to the associate originating due to the interaction of oxygen and gallium vacancies, low-intensity bands were associated with the recombination of excitons in quantum wells formed by the acceptor clusters. It was found that the damping time constant for the band with a maximum of 3.14 eV is 105 μs, and for the band with a maximum of 2.95 eV - 114 μs. The proximity of the decay time constants of these bands confirms their relationship with the common associate.