|Generate QR code
Open Access
Subscription Access
RAMAN SPECTRА OF SILICON/GERMANIUM ALLOY THIN FILMS BASED ON POROUS SILICON
https://doi.org/10.47612/0514-7506-2022-89-5-614-620
Abstract
The regularities of composition changes of silicon/germanium alloy thin films formed on a monocrystalline silicon substrate by electrochemical deposition of germanium into a porous silicon matrix with subsequent rapid thermal annealing (RTA) at a temperature of 750–950°C are studied. An analysis of the samples by Raman spectroscopy showed that an increase of RTA temperature leads to a decrease in the germanium concentration in the formed film. A decrease of the RTA duration at a given temperature makes it possible to obtain films with a higher concentration of germanium and to control the composition of thin silicon/germanium alloy films formed by changing the temperature and duration of RTA. The obtained results on controlling the composition of silicon/germanium alloy films can be used to create functional electronic devices, thermoelectric power converters, and optoelectronic devices.
About the Authors
E. B. Chubenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Minsk
N. L. Grevtsov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Minsk
V. P. Bondarenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Minsk
I. M. Gavrilin
National Research University of Electronic Technology – MIET
Russian Federation
Russian Federation
Moscow
A. V. Pavlikov
National Research University of Electronic Technology – MIET
Russian Federation
Russian Federation
Moscow
A. A. Dronov
National Research University of Electronic Technology – MIET
Russian Federation
Russian Federation
Moscow
L. S. Volkova
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
Russian Federation
Russian Federation
Moscow
S. A. Gavrilov
National Research University of Electronic Technology – MIET
Russian Federation
Russian Federation
Moscow
References
1. Y. Shiraki, N. Usami. Silicon–Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics, Cambridge, Woodhead Publishing (2011) 3—25
2. L. Vegard. Z. Physik, 5 (1920) 17—26
3. J. P. Dismukes, L. Ekstrom, R. J. Pfaff. J. Phys. Chem., 68 (1964) 3021—3027
4. N. M. Ravindra, B. Jariwala, A. Bañobre, A. Maske. Thermoelectrics: Fundamentals, Materials Selection, Properties, and Performance, Cham, Springer (2019) 49—67
5. V. I. Talanin. New Research on Silicon — Structure, Properties, Technology, London, IntechOpen (2017) 84—101
6. D. Benedikovic, L. Virot, G. Aubin, J.-M. Hartmann, F. Amar, X. Le Roux, C. Alonso-Ramos, E. Cassan, D. Marris-Morini, J.-M. Fédéli, F. Boeuf, B. Szelag, L. Vivien. Nanophotonics, 10 (2021) 1059—1079
7. X. Zhang, L.-D. Zhao. J. Materiomics, 1 (2015) 92—105
8. I. M. Gavrilin, N. L. Grevtsov, A. V. Pavlikov, A. A. Dronov, E. B. Chubenko, V. P. Bondarenko, S. A. Gavrilov. Mater. Lett., 313 (2022) 131802
9. E. Fahrenkrug, J. Biehl, S. Maldonado. Chem. Mater., 27 (2015) 3389—3396
10. I. M. Gavrilin, D. G. Gromov, A. A. Dronov, S. V. Dubkov, R. L. Volkov, A. Yu. Trifonov, N. I. Borgardt, S. A. Gavrilov. Semicond., 51 (2017) 1067—1071
11. S. Acharya, L. Ma, S. Maldonado. ACS Appl. Nano Mater., 1 (2018) 5553—5561
12. Q. Cheek, E. Fahrenkrug, S. Hlynchuk, D. H. Alsem, N. J. Salmon, S. Maldonado. ACS Nano, 14 (2020) 2869—2879
13. R. Schwarz, F. Heinrich, E. Hollstein. Z. Anorg. Allgem. Chem., 229 (1936) 146
14. C. G. Fink, V. M. Dokras. J. Electrochem. Soc., 95 (1949) 80—97
15. N. Brinda-Konopik, G. Schade. Electrochim. Acta, 25 (1980) 697—701
16. R. K. Pandey, S. N. Sahu, S. Chandra. Handbook of Semiconductor Deposition, New York, Marcel Dekker Inc. (1996) 201—203
17. N. Chandrasekharan, S. C. Sevov. J. Electrochem. Soc., 157 (2010) C140—C145
18. L. K. van Vugt, A. F. van Driel, R. W. Tjerkstra, L. Bechger, W. L. Vos, D. Vanmaekelbergh, J. J. Kelly. Chem. Commun., 2002 (2002) 2054—2055
19. E. B. Chubenko, S. V. Redko, A. I. Sherstnyov, V. A. Petrovich, D. A. Kotov, V. P. Bondarenko. Semicond., 50 (2016) 372—376
20. K.-H. Li, C. Tsai, S. Shih, T. Hsu, D. L. Kwong, J. C. Campbell. J. Appl. Phys., 72 (1992) 3816—3817
21. I. P. Herman. Optical Diagnostics for Thin Film Processing, San Diego, Academic Press (1996) 559—590
22. J. H. Parker, D. W. Feldman, M. Ashkin. Phys. Rev., 155 (1967) 712—714
23. A. Shklyaev, V. A. Volodin, M. Stoffel, H. Rinnert, M. Vergnat. J. Appl. Phys., 123 (2018) 015304
24. M. I. Alonso, K. Winer. Phys. Rev. B, 39 (1989) 10056—10062
25. P. M. Mooney, F. H. Dacol, J. C. Tsang, J. O. Chu. Appl. Phys. Lett., 62 (1993) 2069—2071
26. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl, G. Bauer. Mater. Sci. Semicond. Proc., 11 (2008) 279—284
27. V. I. Korepanov, D. M. Sedlovets. Analyst., 143 (2018) 2674—2679
28. Y. Gao, P. Yin. Sci. Rep., 7 (2017) 43602
29. S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J.-M. Baribeau. J. Appl. Phys., 116 (2014) 014305
Review
For citations:
Chubenko E.B., Grevtsov N.L., Bondarenko V.P., Gavrilin I.M., Pavlikov A.V., Dronov A.A., Volkova L.S., Gavrilov S.A. RAMAN SPECTRА OF SILICON/GERMANIUM ALLOY THIN FILMS BASED ON POROUS SILICON. Zhurnal Prikladnoii Spektroskopii. 2022;89(5):614-620. (In Russ.) https://doi.org/10.47612/0514-7506-2022-89-5-614-620
Views: 248
Email this article 