CHARACTERIZATION OF SURFACE OF SILVER-ION IMPLANTED SILICON BY OPTICAL REFLECTANCE
Abstract
The optical reflection of surface of silicon implanted with Ag+ ions at low energy of 30 keV in a wide dose range 5.0 · 1014-1.5 · 1017 ion/cm2 was studied in parallel with electron microscopy observation of the samples. It was found that with increasing ion dose of irradiation, the reflection intensity in the UV region of the Si spectrum decreases monotonically due to amorphization and macrostructuring of Si near-surface layer. In the long-wavelength region of the reflection spectra, a selective band with a maximum near 830 nm is recorded due to the plasmon resonance of ion-synthesized Ag nanoparticles.
About the Authors
A. L. Stepanov
Kazan Physical-Technical Institute Kazan Scientific Center, Russian Academy of Sciences; Kazan Federal University
Russian Federation
Russian Federation
V. V. Vorobev
Kazan Federal University
Russian Federation
Russian Federation
V. I. Nuzhdin
Kazan Physical-Technical Institute Kazan Scientific Center, Russian Academy of Sciences
Russian Federation
Russian Federation
V. F. Valeev
Kazan Physical-Technical Institute Kazan Scientific Center, Russian Academy of Sciences
Russian Federation
Russian Federation
Yu. N. Osin
Kazan Federal University
Russian Federation
Russian Federation
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Review
For citations:
Stepanov A.L., Vorobev V.V., Nuzhdin V.I., Valeev V.F., Osin Yu.N. CHARACTERIZATION OF SURFACE OF SILVER-ION IMPLANTED SILICON BY OPTICAL REFLECTANCE. Zhurnal Prikladnoii Spektroskopii. 2017;84(5):726-730. (In Russ.)
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