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Nonlinear Absorption of Teraherts Radiation by Free Charge Carriers in Polar Semiconductors
Abstract
A formula is obtained for the absorption coefficient of intense terahertz radiation by free electrons in a semiconductor when the main mechanism of electron scattering is the spontaneous emission of polar optical phonons. It is shown that the absorption coefficient increases sharply when the average energy of electron oscillations in the terahertz field exceeds the energy of the optical phonon.
About the Author
V. L. Malevich
B. I. Stepanov Institute Physics of the National Academy of Sciences;
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Minsk
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Review
For citations:
Malevich V.L. Nonlinear Absorption of Teraherts Radiation by Free Charge Carriers in Polar Semiconductors. Zhurnal Prikladnoii Spektroskopii. 2024;91(1):22-28. (In Russ.)
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