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X-Ray Photo electron and Rutherford Backscattering Spectroscopy Studies of Silicon Hyperdoped with Selenium
Abstract
The possibility of surface passivation with selenium for silicon layers hyperdoped with Se was estimated by the X-Ray photoelectron and Rutherford backscattering spectroscopy. Silicon layers hyperdoped with selenium have been formed by Se implantation (140 keV, 6.1 · 1015 cm–2) followed by pulsed laser annealing (PLA) (λ = 694 nm, W = 2.0 J/cm2, τ = 70 ns). It was found that the Se concentration in the sub-surface region (2.0–2.5 nm) is 0.67% (3.35 · 1020 cm–3). Such a high concentration of Se can be attributed to the effect of accumulation of these species in the near-surface region during the PLA process. It was shown that Se is solely bonded to Si, Se-O bonds were not formed in the sub-surface region of the implanted layer during PLA. The chosen laser pulse energy density of W = 2.0 J/cm2 has provided achieving the structural perfection (above 91 %) and high concentration of Se at the Si lattice sites (above 69 %).
About the Authors
F. F. Komarov
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
Belarus
Belarus
Minsk
Wang Ting
Belarusian State University
Belarus
Belarus
Minsk
L. A. Vlasukova
Belarusian State University
Belarus
Belarus
Minsk
I. N. Parkhomenko
Belarusian State University
Belarus
Belarus
Minsk
O. V. Milchanin
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
Belarus
Belarus
Minsk
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Review
For citations:
Komarov F.F., Ting W., Vlasukova L.A., Parkhomenko I.N., Milchanin O.V. X-Ray Photo electron and Rutherford Backscattering Spectroscopy Studies of Silicon Hyperdoped with Selenium. Zhurnal Prikladnoii Spektroskopii. 2024;91(3):436-443. (In Russ.)
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