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Effects of 4 MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells Structure
Abstract
The effect of irradiation with 4 MeV electrons of different doses on the processes of radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se)2 thin films of solar cells was studied. It was established that near-edge photoluminescence (PL) in the energy range of ~ 0.9—1.2 eV in non-irradiated and irradiated direct-gap Cu(In,Ga)(S,Se)2 solid solutions is caused by optical interband transitions and radiative recombination through the energy levels of acceptor and donor type structure defects in the presence of strong potential fluctuations. The effect of an energy shift of the maxima of near-edge PL bands and a redistribution of their intensity in thin films after electron irradiation depending on the irradiation dose was found based on measurements of PL spectra in the temperature range of 5—300 K. Based on the data on the quenching of PL bands intensity, the activation energies of nonradiative recombination processes were determined. The possible nature of structural defects in non-irradiated and electron-irradiated Cu(In,Ga)(S,Se)2 solid solutions is discussed.
About the Authors
V. D. Zhivulko
State Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science
Belarus
Belarus
Minsk
A. V. Mudryi
State Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science
Belarus
Belarus
Minsk
O. M. Borodavchenko
State Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science
Belarus
Belarus
Minsk
E. V. Lutsenko
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
V. N. Pavlovskii
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
G. P. Yablonskii
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
M. V. Yakushev
M. N. Mikheev Institute of Metal Physics of the Ural Branch of RAS; Ural Federal University; Institute of Solid State Chemistry of the Ural Branch of RAS
Russian Federation
Russian Federation
Ekaterinburg
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Review
For citations:
Zhivulko V.D., Mudryi A.V., Borodavchenko O.M., Lutsenko E.V., Pavlovskii V.N., Yablonskii G.P., Yakushev M.V. Effects of 4 MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells Structure. Zhurnal Prikladnoii Spektroskopii. 2024;91(4):496-504. (In Russ.)
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