ABOUT THE POSSIBILITY OF DETERMINING OF THE GRAPHENE DOPING LEVEL BY THE RAMAN SPECTRA
Abstract
Raman spectroscopy was used to study the structure of graphene that was synthesized from methane and transferred to a SiO2/Si substrate. The synthesis was carried out by chemical vapor deposition at atmospheric pressure. Various methods of the graphene transfer and the polymer removal were used. It is found for the samples under study that the dependence of the 2D peak position on the position of the G peak is well described by linear functions with slope ~2.2 that suggests the existence of a biaxial stress in graphene. A change of doping in the samples was discovered.
About the Authors
N. G. Kovalchuk
Belarusain State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
K. A. Nigerish
Belarusain State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
M. M. Mikhalik
Belarusain State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
N. I. Kargin
National Research Nuclear University MEPHI
Russian Federation
Russian Federation
I. V. Komissarov
Belarusain State University of Informatics and Radioelectronics; National Research Nuclear University MEPHI
Russian Federation
Russian Federation
S. L. Prischepa
Belarusain State University of Informatics and Radioelectronics; National Research Nuclear University MEPHI
Russian Federation
Russian Federation
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Review
For citations:
Kovalchuk N.G., Nigerish K.A., Mikhalik M.M., Kargin N.I., Komissarov I.V., Prischepa S.L. ABOUT THE POSSIBILITY OF DETERMINING OF THE GRAPHENE DOPING LEVEL BY THE RAMAN SPECTRA. Zhurnal Prikladnoii Spektroskopii. 2017;84(6):915-919. (In Russ.)
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