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Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals
Abstract
Cree 4H-SiC single crystal wafers are studied by high-resolution non-destructive photoluminescence at room temperature to experimentally investigate near-band-edge (NBE) and stacking fault photoluminescence. The contribution of stacking fault photoluminescence to the photoluminescence spectrum of the original 4H-SiC crystals allows evaluating the relation of band-to-band, NBE, and stacking fault photoluminescence. The experimental photoluminescence spectrum of 4H-SiC obeys the Lorentzian distribution. Electron-phonon interaction leads to a significant mutual dependence of the intensities of band-to-band, NBE, and stacking fault photoluminescence.
About the Authors
B. G. Atabaev
Arifov Institute of Ion-Plasma and Laser Technologies of Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
Kh. N. Juraev
S. A. Azimov Physical-Technical Institute of Academy of Sciences of the Republic of Uzbekistan; Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
Uzbekistan
Uzbekistan
Tashkent
Z. Sh. Shaymardanov
Arifov Institute of Ion-Plasma and Laser Technologies of Academy of Sciences of the Republic of Uzbekistan; National University of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
R. R. Jalolov
Arifov Institute of Ion-Plasma and Laser Technologies of Academy of Sciences of the Republic of Uzbekistan; National University of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
Sh. Z. Urolov
Arifov Institute of Ion-Plasma and Laser Technologies of Academy of Sciences of the Republic of Uzbekistan; Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
Uzbekistan
Uzbekistan
Tashkent
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For citations:
Atabaev B.G., Juraev Kh.N., Shaymardanov Z.Sh., Jalolov R.R., Urolov Sh.Z. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals. Zhurnal Prikladnoii Spektroskopii. 2025;92(5):582-587. (In Russ.)
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