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Influence of Metal Type and Layer Thickness on Absorption of Optical Radiation by Profiled Si3N4/Me/Si3N4 Structures
Abstract
In the optical absorption spectra of Si3N4/Me/Si3N4 structures calculated by the finite difference time domain method, the effect of the structural layer thickness on the absorption peak level and width was found. Reducing the thickness of the upper and lower Si3N4 layers from 400 to 100 nm leads to about 20% increase in absorption and broadening of the absorption band with the intensity of >90 % from 0.8 to 1.6 μm. It is shown that in the absorption spectrum of Si3N4/Ti/Si3N4 structure with the thickness of each layer of 50 nm, the thickness of the absorption band with the intensity of >90 % consists 4.3 μm. Reducing the profiled layer of Ti from 130 to 50 nm leads to an insignificant decrease in the maximum absorption value from 99 to 96%. It has been shown that the absorption band broadening is connected with the effect of Si3N4 thickness to the interferential processes in Si3N4/Ti/Si3N4 structures. It is established that in the range of 8.3–13 μm there is a dependence of the absorption level on the metal type due to the dependence of free electrons concentration on the metal type.
About the Authors
S. V. Kozodoev
Belarusian State University; JSC “INTEGRAL”, “INTEGRAL” Holding Managing Company
Belarus
Belarus
Minsk
A. I. Muhammad
Belarusian State University
Belarus
Belarus
Minsk
V. V. Kolos
JSC “INTEGRAL”, “INTEGRAL” Holding Managing Company
Belarus
Belarus
Minsk
P. I. Gaiduk
Belarusian State University
Belarus
Belarus
Minsk
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Review
For citations:
Kozodoev S.V., Muhammad A.I., Kolos V.V., Gaiduk P.I. Influence of Metal Type and Layer Thickness on Absorption of Optical Radiation by Profiled Si3N4/Me/Si3N4 Structures. Zhurnal Prikladnoii Spektroskopii. 2025;92(2):187-192. (In Russ.)
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