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Transparency Current and Gain Spectrum of InGaAs/GaAs Quantum Well-Dots
Abstract
The experimental dependence of the transparency current of InGaAs/GaAs quantum well-dots on the photon energy, which corresponds to the difference of quasi-Fermi levels for electrons and holes, has been obtained. It is shown that modal gain spectra can be calculated from spontaneous luminescence spectra using the obtained dependence and a relation between spontaneous luminescence and optical absorption. The modal gain spectra of InGaAs/GaAs quantum well-dots at different pump currents have been calculated. The technique can be used to study gain spectra of the devices operating in superluminescence regimes, when the position of the gain maximum is unknown.
About the Authors
G. O. Kornyshov
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
A. S. Payusov
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
A. A. Kharchenko
J. I. Alferov Academic University
Russian Federation
Russian Federation
St. Petersburg
A. A. Beckman
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
Yu. M. Shernyakov
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
S. A. Mintairov
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
N. A. Kalyuzhny
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
M. V. Maksimov
J. I. Alferov Academic University
Russian Federation
Russian Federation
St. Petersburg
N. Yu. Gordeev
A. F. Ioffe Institute of Physics and Technology
Russian Federation
Russian Federation
St. Petersburg
References
1. V. P. Gribkovskii, V. A. Samoilyukovich. J. Appl. Spectr., 11, N 1 (1969) 838—839], doi: 10.1007/BF00612551
2. B. W. Hakki, T. L. Paoli. J. Appl. Phys., 46, N 3 (1975) 1299–1306, doi: 10.1063/1.321696
3. C. H. Henry, R. A. Logan, F. R. Merritt. J. Appl. Phys., 51, N 6 (1980) 3042—3050, doi: 10.1063/1.328091
4. P. Blood, A. I. Kucharska, J. P. Jacobs, K. Griffiths. J. Appl. Phys., 70, N 3 (1991) 1144—1156, doi: 10.1063/1.349622
5. L. V. Asryan, R. A. Suris. Semiconductors, 38, N 1 (2004) 1—22, doi: 10.1134/1.1641126
6. H. C. Casey, M. B. Panish. Heterostructure Lasers, Pt B: Materials and Operating Characteristics, London, Academic Press (1978)
7. A. S. Payusov, A. A. Beckman, G. O. Kornyshov, Yu. M. Shernyakov, M. V. Maximov, N. Yu. Gordeev. Semiconductors, 56, N 12 (2022) 919, doi: 10.21883/SC.2022.12.55152.4409
8. M. V. Maximov, A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, N. V. Kryzhanovskaya, E. I. Moiseev, N. Yu. Gordeev, Y. M. Shernyakov, A. S. Payusov, F. I. Zubov, V. N. Nevedomskiy, S. S. Rouvimov, A. E. Zhukov. Appl. Sci., 10, N 3 (2020) 1038, doi: 10.3390/app10031038
9. A. E. Zhukov, A. R. Kovsh, D. A. Livshits, V. M. Ustinov, Z. I. Alferov. Semicond. Sci. Technol., 18, N 8 (2003) 774—781, doi: 10.1088/0268-1242/18/8/310
10. C.-C. Huang, C.-H. Cheng, Y.-S. Su, C.-F. Lin. IEEE Photon. Technol. Lett., 16, N 2 (2004) 371—373, doi: 10.1109/LPT.2003.821050
Review
For citations:
Kornyshov G.O., Payusov A.S., Kharchenko A.A., Beckman A.A., Shernyakov Yu.M., Mintairov S.A., Kalyuzhny N.A., Maksimov M.V., Gordeev N.Yu. Transparency Current and Gain Spectrum of InGaAs/GaAs Quantum Well-Dots. Zhurnal Prikladnoii Spektroskopii. 2025;92(2):193-197. (In Russ.)
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