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Mechanisms of Broadband Structural Luminescence of Disordered Wide-Gap Dielectrics
Abstract
Possible mechanisms of broadband structural luminescence in the transparency band of disordered widegap dielectrics are considered theoretically for the case of electronic transitions at deep-lying levels of intrinsic structural defects such as valence-alternation pairs in v-SiO2. It is concluded that the main mechanism is the geminate recombination of carriers at deep-lying levels of valence-alternation pairs. It is shown that accompanying mechanisms can be associated with polaron effects on isolated centers and phenomena on delocalized defect states.
About the Authors
S. E. Maksimov
Arifov Institute of Ion Plasma and Laser Technologies of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
Yu. V. Pakharukov
Tyumen Industrial University
Russian Federation
Russian Federation
Tyumen
Sh. U. Yuldashev
National University of Uzbekistan named after Mirzo Ulugbek
Uzbekistan
Uzbekistan
Tashkent
O. V. Trunilina
Arifov Institute of Ion Plasma and Laser Technologies of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
B. L. Oksengendler
Institute for Material Sciences of Academy of Sciences of Republic of Uzbekistan, Scientific and Production Association “Physics-Sun”
Uzbekistan
Uzbekistan
Tashkent region
B. R. Kutlimurotov
Arifov Institute of Ion Plasma and Laser Technologies of the Academy of Sciences of the Republic of Uzbekistan; Military Academic Lyceum “Temurbeklar Maktabi”
Uzbekistan
Uzbekistan
Tashkent
Kh. B. Ashurov
Arifov Institute of Ion Plasma and Laser Technologies of the Academy of Sciences of the Republic of Uzbekistan
Uzbekistan
Uzbekistan
Tashkent
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Review
For citations:
Maksimov S.E., Pakharukov Yu.V., Yuldashev Sh.U., Trunilina O.V., Oksengendler B.L., Kutlimurotov B.R., Ashurov Kh.B. Mechanisms of Broadband Structural Luminescence of Disordered Wide-Gap Dielectrics. Zhurnal Prikladnoii Spektroskopii. 2026;93(2):175-182. (In Russ.)
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