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Low-Cost Synthesis of Zinc-Doped SnO2 Films for Optoelectronic Applications
Abstract
Tin oxide, a distinguished metal oxide suitable for optoelectronic usage, has features that can be easily enhanced through doping. In the current study, films of zinc-doped SnO2 (Zn/Sn = 0.03) were synthesized via the sol-gel screen-printing strategy and subsequently sintered at 450°C for 10 min. X-ray diffraction findings established the polycrystalline characteristics and single-phase tetragonal configuration of the synthesized films. The occurrence of Sn, O, and Zn ions is evidenced by energy-dispersive X-ray analysis. According to UV-Vis analysis, the band gap energy (direct transition) was found to be 3.62 eV. Hall measurement analysis revealed the n-type conductivity of the films, characterized by a resistivity of 1.03x10–3 Ω · cm.
About the Authors
V. Kumar
Krishna Institute of Engineering and Technology (KIET)
India
India
Vipin Kumar - Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
S. Juneja
Krishna Institute of Engineering and Technology (KIET)
India
India
Soniya Juneja - Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
A. Agrwal
Krishna Institute of Engineering and Technology (KIET)
India
India
Akansha Agrwal - Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
P. Rai
Krishna Institute of Engineering and Technology (KIET)
India
India
Priyanka Rai - Department of Applied Sciences and Humanities, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
Parvin Kumar
Krishna Institute of Engineering and Technology (KIET)
India
India
Department of Electronics and Communication Engineering, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
A. Sharma
Krishna Institute of Engineering and Technology (KIET)
India
India
Abhishek Sharma - Department of Electronics and Communication Engineering, Krishna Institute of Engineering and Technology (KIET).
Ghaziabad, Delhi NCR, Uttar Pradesh
D. K. Dwivedi
Madan Mohan Malaviya University of Technology
India
India
Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology.
Gorakhpur
N. P. Yadav
Hubei Polytechnic University
China
China
School of Electrical and Electronics Information Engineering, Hubei Polytechnic University.
Huangshi, Hubei
M. Gupta
Naturality R&D
Spain
Spain
Monika Gupta.
Calle Sant Leopold, Terrassa, Barcelona
Pradeep Kumar
Strentex Innovations D.O.O.
Serbia
Serbia
Novi Sad
R. A. Zargar
Guru Nanak University
India
India
Department of Physics, University Institute of Emerging Technologies, Guru Nanak University.
Hyderabad
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Review
For citations:
Kumar V., Juneja S., Agrwal , Rai P., Kumar P., Sharma A., Dwivedi D.K., Yadav N.P., Gupta M., Kumar P., Zargar R.A. Low-Cost Synthesis of Zinc-Doped SnO2 Films for Optoelectronic Applications. Zhurnal Prikladnoii Spektroskopii. 2026;93(2):293-1-293-4.
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