Raman Conversion of Nd:YAG Microchip Laser Radiation in CVD Diamond

Stimulated Raman scattering (SRS) was studied in a grown by chemical vapor deposition (CVD) diamond mono-crystal placed in the cavity of a microchip laser. The microchip laser was built on a composite crystal: an Nd³⁺:YAG active element and a Cr⁴⁺:YAG passive Q-switch. Pumping was performed by a diode laser  (λ = 808 nm) with a power of 2.2–4.5 W. Varying the pump power led to a change in the repetition rate of pulses generated at a wavelength of λ = 1064 nm between 7 and 30 kHz. The laser pulse energy, depending on the experimental conditions, varied in the range of 5.1–10 μJ, while their duration was in the range  of 2—3 ns. The pulses of the first Stokes component (λ = 1240 nm) had an energy of 1.75–3.75 μJ, and their pulse-width, compared to laser pulses, was compressed to 0.6 ns.

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