Quantum Efficiency Measuring Method for High-Sensitive Silicon Photomultipliers

This paper examines the physical and technical aspects of implementing a method for measuring the absolute spectral response and photon detection efficiency (PDE) of highly sensitive silicon photomultipliers (SiPMs) using laser radiation sources. The proposed method takes into account the contribution of the charge of time-correlated optical interference and enables high-precision measurement of SiPM parameters. The results of testing by this method are presented using packaged SiPMs, one of which of the S13360-1350CS type from “Hamamatsu” (Japan), has been used as a standard of comparison, and another one is KОF 1350  (JSC “INTEGRAL”, Belarus). These SiPMs have single pixel dimensions of 5050 μm and a light-sensitive area of approximately 1.7 mm². For the KOF-1350 SiPM, it was found that with an increase in overvoltage from 3 to 5 V, the coefficient K quickly increases from 0.19 to 0.43.

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