RAMAN SCATTERING ENHANCEMENT USING Au/Si-Ge AND Au/Ge NANOSTRUCTURES
Abstract
The Raman scattering enhancement is shown using Au/SiGe and Au/Ge substrates obtained by the method of chemical deposition of SiGe and Ge layers from the gaseous phase under reduced pressure on silicon substrates and thermal deposition of gold. AFM image analysis shows the cone-shaped nanorods formed on the surface of the substrates. These nanostructures permit to obtain the enhancement of Raman scattering of mitoxantrone (C = 10- 5 M) up to 2-3 orders as a minimum. Using the 785 nm excitation wavelength, an additional enhancement of the SERS signal in 1.7-4.3 times for the Au/Ge substrates and in 1.5-5.5 times for the Au/SiGe substrates is observed.
About the Authors
A. S. Matsukovich
B. I. Stepanov Institutе of Physics of the National Academy of Sciences of Belarus
Russian Federation
Russian Federation
O. Y. Nalivaiko
JSC “Integral” - Holding Management Company
Russian Federation
Russian Federation
K. V. Chizh
Prokhorov General Physics Institute, Russian Academy of Sciences
Russian Federation
Russian Federation
S. V. Gaponenko
B. I. Stepanov Institutе of Physics of the National Academy of Sciences of Belarus
Russian Federation
Russian Federation
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Review
For citations:
Matsukovich A.S., Nalivaiko O.Y., Chizh K.V., Gaponenko S.V. RAMAN SCATTERING ENHANCEMENT USING Au/Si-Ge AND Au/Ge NANOSTRUCTURES. Zhurnal Prikladnoii Spektroskopii. 2019;86(1):84-88. (In Russ.)
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