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Structural and Optical Properties of SiC/Si Heterostructures Obtained Using Rapid Vaccum-Thermal Carbidization of Silicon
https://doi.org/10.47612/0514-7506-2022-89-2-204-209
Abstract
TEM investigation revealed that the rapid vacuum-thermal carbidization of silicon at 1100°C leads to the formation of cubic silicon carbide (SiC) layers. The band of the IR transmission spectrum at 798 cm–1 corresponding to the stretching vibration of Si-C and the maximum of Raman spectrum at 793 cm–1 relating to transverse optical phonon mode of SiC confirm the formation of a layer of the cubic SiC politype. The absorption band of Si-O-Si (1100 cm–1) was found using the IR-spectroscopy. The dependence of the transmission coefficient on the wavenumber was determined.
About the Authors
M. V. Lobanok
Belarusian State University
Belarus
Belarus
Minsk
A. I. Mukhammad
Belarusian State University
Belarus
Belarus
Minsk
P. I. Gaiduk
Belarusian State University
Belarus
Belarus
Minsk
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Review
For citations:
Lobanok M.V., Mukhammad A.I., Gaiduk P.I. Structural and Optical Properties of SiC/Si Heterostructures Obtained Using Rapid Vaccum-Thermal Carbidization of Silicon. Zhurnal Prikladnoii Spektroskopii. 2022;89(2):204-209. (In Russ.) https://doi.org/10.47612/0514-7506-2022-89-2-204-209
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