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High-Speed Air-Bridge Photodetectors for the Mid-IR Spectral Region
https://doi.org/10.47612/0514-7506-2023-90-1-102-108
Abstract
The uncooled air-bridge photodetectors based on InAs/InAsSbP heterostructures are presented for the mid-IR spectral region. The main difference in the air-bridge design is that a contact pad is outside the photosensitive mesa and is connected with it only by an air-bridge contact. This design makes it possible to reduce the area of the p-n junction, and, accordingly, the capacity of the device. This leads to an increase in the speed without loss in detectivity. The InAs/InAsSbP heterostructures were grown on InAs substrates with the orientation of (111) by MOCVD. The developed photodetectors had a maximum spectral sensitivity in the range of 2.8–3.1 mm and a differential resistance in zero offset of R0 = 1.0–5.6 kOhm. The capacity of the best devices was C = 3.4–3.6 pF at Urev = 0 V. The speed of the photodetector using an InGaAsP/InP laser with a wavelength of 1.55 mm was carried out. Determined by the front growth of the photoresponse, the speed is 200 ps. The developed air-bridge photodetectors can be applied to register laser pulses in the range of 1.1–3.8 mm.
About the Authors
A. A. Pivovarova
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
E. V. Kunitsyna
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
G. G. Konovalov
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
S. O. Slipchenko
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
A. A. Podoskin
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
I. A. Andreev
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
N. A. Pikhtin
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
N. D. Il’inskaya
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
A. E. Chernyakov
Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
Russian Federation
Russian Federation
St. Petersburg
Yu. P. Yakovlev
Ioffe Institute
Russian Federation
Russian Federation
St. Petersburg
References
1. E. Tournie, A. N. Baranov. Semicond. and Semimetals, 86 (2012) 183—226
2. L. J. Mawst, D. Botez. IEEE Photon. J., 14, N 1 (2022) 1508025
3. Б. Матвеев. Фотоника, 51, № 3 (2015) 152—164
4. А. В. Сукач, В. В. Тетеркин, С. В. Старый, Н. В. Зотова, С. А. Карандашев, Б. А. Матвеев, М. А. Ременный, Н. М. Стусь, Г. Н. Талалакин. Тез. докл. XVII междунар. науч.-тех. конф. по фотоэлектронике и приборам ночного видения, 25—28 мая 2004 г., Москва, Россия (2004) 29
5. С. С. Кижаев, М. П. Михайлова, С. С. Молчанов, Н. Д. Стоянов, Ю. П. Яковлев. Письма в ЖТФ, 24, № 7 (1998) 1—7 [S. S. Kizhaev, M. P. Mikhailova, S. S. Molchanov, N. D. Stoyanov, Yu. P. Yakovlev. Tech. Phys. Lett., 24 (1998) 247—249]
6. A. R. Marshall, P. J. Ker, A. Krysa, J. P. David, C. H. Tan. Opt. Express, 19, N 23 (2011) 23341(1—9)
7. B. Chen, Y. Chen, Z. Deng. Photonics, 8, N 14 (2021) 2—19
8. Y. Chen, X. Chai, Z. Xie, Z. Deng, N. Zhang, Y. Zhou, Z. Xu, J. Chen, Y. Zhou, B. Chen. J. Lightwave Technol., 38 (2020) 939—945
9. Z. Xie, J. Huang, X. Chai, Z. Deng, Y. Chen, Q. Lu, Z. Xu, J. Chen, Y. Zhou, B. Chen. Opt. Express, 28 (2020) 36915—36923
10. J. Huang, Z. Shen, Z. Wang, Z. Zhou, B. Peng, W. Liu, Y. Chen, B. Chen. IEEE Electron. Dev. Lett., 43, N 5 (2022) 745—748
11. Е. В. Куницына, А. А. Пивоварова, И. А. Андреев, Г. Г. Коновалов, Э. В. Иванов, Н. Д. Ильинская, Ю. П. Яковлев. ФТП, 55, № 7 (2021) 607—613 [E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il’inskaya, Yu. P. Yakovlev. Semiconductors, 55, N 7 (2021) 601—607]
12. И. А. Андреев, О. Ю. Серебренникова, Н. Д. Ильинская, А. А. Пивоварова, Г. Г. Коновалов, Е. В. Куницына, В. В. Шерстнев, Ю. П. Яковлев. ФТП, 49, № 12 (2015) 1720—1726 [I. A. Andreev, O. Y. Serebrennikova, N. D. Il’inskaya, A. A. Pivovarova, G. G. Konovalov, E. V. Kunitsyna, V. V. Sherstnev, Yu. P. Yakovlev. Semiconductors, 49, N 12 (2015) 1671—1677]
13. И. А. Андреев, О. Ю. Серебренникова, Г.С. Соколовский, В. В. Дюделев, Н. Д. Ильинская, Г. Г. Коновалов, Е. В. Куницына, Ю. П. Яковлев. ФТП, 47, № 8 (2013) 1109—1115 [I. A. Andreev, O. Y. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev, N. D. Il’inskaya, G. G. Konovalov, E. V. Kunitsyna, Yu. P. Yakovlev. Semiconductors, 47 (2013) 1103—1109]
14. Chip on Board: Technology for Multichip Modules, Ed. John H. Lau, New York, Springer (1994)
Review
For citations:
Pivovarova A.A., Kunitsyna E.V., Konovalov G.G., Slipchenko S.O., Podoskin A.A., Andreev I.A., Pikhtin N.A., Il’inskaya N.D., Chernyakov A.E., Yakovlev Yu.P. High-Speed Air-Bridge Photodetectors for the Mid-IR Spectral Region. Zhurnal Prikladnoii Spektroskopii. 2023;90(1):102-108. (In Russ.) https://doi.org/10.47612/0514-7506-2023-90-1-102-108
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