SPECTROSCOPIC ELLIPSOMETRY STUDY OF SILICON SURFACE IMPLANTED BY THE OXYGEN AND HELIUM IONS
Abstract
The results of studies by the method of spectral ellipsometry of a surface of silicon implanted with oxygen ions in the dose range of 7.5×1014-3.7×1016 ion/cm2 and helium ions in a dose range of 6×1016-6×1017 ion/cm2 with an energy of 40 keV at constant ion current density 2 μA/cm2 and room temperature of the irradiated substrates are presented. Dependences of the thickness of the implanted layer in irradiated plates and the degree of its amorphization on the dose of ion implantation are obtained.
About the Authors
V. V. Bazarov
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI)
Russian Federation
Russian Federation
V. I. Nuzhdin
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI)
Russian Federation
Russian Federation
V. F. Valeev
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI)
Russian Federation
Russian Federation
N. M. Lyadov
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI)
Russian Federation
Russian Federation
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Review
For citations:
Bazarov V.V., Nuzhdin V.I., Valeev V.F., Lyadov N.M. SPECTROSCOPIC ELLIPSOMETRY STUDY OF SILICON SURFACE IMPLANTED BY THE OXYGEN AND HELIUM IONS. Zhurnal Prikladnoii Spektroskopii. 2019;86(1):151-154. (In Russ.)
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