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Zhurnal Prikladnoii Spektroskopii

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Zhang Y., Wang K., Wang H., Tian Y., Wang Y., Li J., Chai Y. Optical characterization of native defects in 4H-SiC irradiated by 10 MeV electrons with subsequent annealing. Zhurnal Prikladnoii Spektroskopii. 2020;87(6):891-896.

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ISSN 0514-7506 (Print)
68-2 Nezavisimosti Prosp., Minsk 220072, Belarus
B. I. Stepanov Institute of Physics of the National Academy of Sciences
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supported by NEICON (Elpub lab)