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Density of States and InterzoneLight Absorption in Thin β- Ga2O3 Films
Abstract
The long-wave edge of the fundamental absorption band of β-Ga2O3 thin films obtained by the method of radio-frequency ion-plasma sputtering is studied. It is shown that during annealing offilms in oxygen, argon, and hydrogen, the edge of the interzone absorption is well approximated by the Urbach empirical rule. To analyze the experimental results, the model of a heavily doped or defective semiconductor in the quasiclassical approximation was used. The use of this model allowed determining the radius of the basic electronic state a, the shielding radius rs, and the root-mean-square potential А.
About the Authors
O. M. Bordun
Ivan Franko L’viv National University
Ukraine
Ukraine
L’viv, 79005
B. O. Bordun
Ivan Franko L’viv National University
Ukraine
Ukraine
L’viv, 79005
I. Yo. Kukharskyy
Ivan Franko L’viv National University
Ukraine
Ukraine
L’viv, 79005
I. I. Medvid
Ivan Franko L’viv National University
Ukraine
Ukraine
L’viv, 79005
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Review
For citations:
Bordun O.M., Bordun B.O., Kukharskyy I.Y., Medvid I.I. Density of States and InterzoneLight Absorption in Thin β- Ga2O3 Films. Zhurnal Prikladnoii Spektroskopii. 2021;88(2):193-196. (In Russ.)
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