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Influence of Helium Ion Implantation on Optical Properties of Fused Silica

Abstract

High-purity fused silica has been implanted with 60-keV helium ions at the fluence of 1.5 • 1017 cm-2. The effects of helium-ion implantation on optical properties of silica samples before and after helium implantation have been investigated by infrared (IR), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectrophotometer. After helium-ion implantation, X-ray photoelectron spectroscopy (XPS) results indicate that Si 2p peak is shifted to higher binding energy. An obvious PL band at 500 nm is observed, and the PL intensity is significantly decreased. However, the intensity of IR and optical absorption is increased greatly by ion implantation. A mechanism for the effects of helium implantation on optical properties of fused silica is discussed.

About the Authors

M. Zhong
Aviation Engineering Institute at Civil Aviation Flight University of China
China

Guanghan 618307



J. H. Li
Aviation Engineering Institute at Civil Aviation Flight University of China
China

Guanghan 618307



B. Li
School of Physics at University of Electronic Science and Technology of China
China

Chengdu 610054



C. X. Tian
School of Physics at University of Electronic Science and Technology of China
China

Chengdu 610054



X. Xiang
School of Physics at University of Electronic Science and Technology of China
Russian Federation

Chengdu 610054



C. Zhou
Key Laboratory of Flight Techniques and Flight Safety, CAAC, Civil Aviation Flight University of China
China

Guanghan 618307



W. F. Yang
Aviation Engineering Institute at Civil Aviation Flight University of China
Russian Federation

Guanghan 618307



Review

For citations:


Zhong M., Li J.H., Li B., Tian C.X., Xiang X., Zhou C., Yang W.F. Influence of Helium Ion Implantation on Optical Properties of Fused Silica. Zhurnal Prikladnoii Spektroskopii. 2021;88(2):197-201.

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ISSN 0514-7506 (Print)