Influence of Helium Ion Implantation on Optical Properties of Fused Silica
Abstract
High-purity fused silica has been implanted with 60-keV helium ions at the fluence of 1.5 • 1017 cm-2. The effects of helium-ion implantation on optical properties of silica samples before and after helium implantation have been investigated by infrared (IR), photoluminescence (PL), and ultraviolet-visible (UV-vis) spectrophotometer. After helium-ion implantation, X-ray photoelectron spectroscopy (XPS) results indicate that Si 2p peak is shifted to higher binding energy. An obvious PL band at 500 nm is observed, and the PL intensity is significantly decreased. However, the intensity of IR and optical absorption is increased greatly by ion implantation. A mechanism for the effects of helium implantation on optical properties of fused silica is discussed.
Keywords
About the Authors
M. ZhongChina
Guanghan 618307
J. H. Li
China
Guanghan 618307
B. Li
China
Chengdu 610054
C. X. Tian
China
Chengdu 610054
X. Xiang
Russian Federation
Chengdu 610054
C. Zhou
China
Guanghan 618307
W. F. Yang
Russian Federation
Guanghan 618307
Review
For citations:
Zhong M., Li J.H., Li B., Tian C.X., Xiang X., Zhou C., Yang W.F. Influence of Helium Ion Implantation on Optical Properties of Fused Silica. Zhurnal Prikladnoii Spektroskopii. 2021;88(2):197-201.