For citations:
Danilchyk A.V., Nagornyi A.V., Rzheutskyi N.V., Voinilovich A.G., Pavlovskyi V.N., Lutsenko E.V. Effect of the density of surface V-defects on laser properties of InGaN/GaN heterosctructures with multiple quantum wells grown on silicon substrates. Zhurnal Prikladnoii Spektroskopii. 2021;88(6):895-899. (In Russ.) https://doi.org/10.47612/0514-7506-2021-88-6-895-899
Email this article 