Vertical Pure Electronic Optical Transition and Semiconductor Direct Band Gap
https://doi.org/10.47612/0514-7506-2022-89-1-43-50
Abstract
It is shown that the method of determining the frequency of pure electronic transition from molecular diffuse vibrational spectra is applicable for the estimation of a semiconductor direct band gap. This method is used to determine the direct band gap between the valence band and the photoconductivity band from the photoconductivity spectrum.
About the Author
V. A. Tolkachev
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
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Review
For citations:
Tolkachev V.A. Vertical Pure Electronic Optical Transition and Semiconductor Direct Band Gap. Zhurnal Prikladnoii Spektroskopii. 2022;89(1):43-50. (In Russ.) https://doi.org/10.47612/0514-7506-2022-89-1-43-50
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