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IR-Fourier Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography
Abstract
Photoresist (PR) NFR 016D4 films deposited on the surface of silicon wafers by centrifugation have been studied by attenuated total reflection IR-Fourier spectroscopy. It has been established that at wave numbers <1600 cm–1, an increase in the background absorption of the PR/Si structures is observed, due to the effect of electromagnetic radiation on the silicon substrate and scattering/reflection processes at the PR/Si interface. The asymmetry of the force field of the aromatic ring in the NFR 016D4 film has been found. It is shown that the features of the spectra of thicker NFR 016D4 photoresist films are due to the presence of residual solvent. In the irradiated films, the formation of formaldehyde has been detected as a result of the fragmentation of hydroxymethyl residues in the composition of the phenol-formaldehyde resin. Radiation-induced processes in NFR 016D4 photoresistive films at doses up to 2 ∙ 1015 cm–1 take place mainly with the participation of residual solvent molecules or on by-products of photoresistive film synthesis.
About the Authors
D. I. Brinkevich
Belarusian State University
Belarus
Belarus
Minsk
E. V. Grinyuk
Belarusian State University;
Research Institute for Physical Chemical Problems of the Belarusian State University
Belarus
Belarus
Minsk
S. D. Brinkevich
Belarusian State University;
LLC “My Medical Center–High Technologies”
Belarus
Belarus
Minsk, Vsevolozhsk
V. S. Prosolovich
Belarusian State University
Belarus
Belarus
Minsk
V. V. Kolos
JSC “Integral” Holding Management Company
Belarus
Belarus
Minsk
O. A. Zubova
JSC “Integral” Holding Management Company
Belarus
Belarus
Minsk
S. B. Lastovskii
SSPA “Scientific-Practical Materials Research Centre of National of Academy of Sciences of Belarus”
Belarus
Belarus
Minsk
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Review
For citations:
Brinkevich D.I., Grinyuk E.V., Brinkevich S.D., Prosolovich V.S., Kolos V.V., Zubova O.A., Lastovskii S.B. IR-Fourier Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography. Zhurnal Prikladnoii Spektroskopii. 2023;90(6):863-869. (In Russ.)
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