STOICHIOMETRY OF SILICON DIOXIDE FILMS OBTAINED BY ION-BEAM SPUTTERING
Abstract
We used infrared spectrometry to study the composition of SiOx films obtained by the method of ion-beam sputtering (IBS) of silicon and quartz targets. Films of 150-390 nm were formed on silicon substrates. It was found that an increase in the partial pressure of oxygen in the working gas, an increase in the temperature of the substrate, and the presence of a positive potential on the target during the reactive IBS of silicon led to a shift in the main absorption band of νas to the high-frequency region and an increase in the composite index from 1.41 to 1.85. During the IBS of a quartz target the stoichiometry of the films deteriorates with the increase of the energy of the sputtering argon ions. It can be due to increasing the deposition rate. An increase in the current of the thermionic compensator, an increase in the substrate temperature, and the addition of oxygen contributed to the formation of SiOx films with improved stoichiometry.
About the Authors
E. V. Telesh
Belarusian State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
A. P. Dostanko
Belarusian State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
O. V. Gurevich
Belarusian State University of Informatics and Radioelectronics
Russian Federation
Russian Federation
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Review
For citations:
Telesh E.V., Dostanko A.P., Gurevich O.V. STOICHIOMETRY OF SILICON DIOXIDE FILMS OBTAINED BY ION-BEAM SPUTTERING. Zhurnal Prikladnoii Spektroskopii. 2018;85(1):76-81. (In Russ.)
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