EFFECT OF BORON DOPING ON HIGH RESOLUTION X-RAY DIFFRACTION METROLOGY
Abstract
The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1- x Gex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40´1018-8.7´1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to depend on B doping. For the undoped samples, the difference is ~0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B doped (8.7´1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard’s law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM’s (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.
About the Authors
M. . Faheem
GLOBALFOUNDRIES Inc
Russian Federation
Russian Federation
Y. . Zhang
GLOBALFOUNDRIES Inc
Russian Federation
Russian Federation
X. . Dai
GLOBALFOUNDRIES Inc
Russian Federation
Russian Federation
References
1. Qing Hua Wang, Kourosh Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nature Nanotechnol., 7, 702-712 (2012).
2. F. Bonaccorso, Z. Sun, T. Hasan, A. C. Ferrari, Nature Photonics, 4, 611-622 (2010). 173-7
3. M. Z. Mohd Yusoff, A. Mahyuddin, Z. Hassan, Y. Yusof, M. A. Ahmad, C. W. Chin, H. Abu Hassan, M. J. Abdullah, Superlattices Microstruct., 60, 500-550 (2013).
4. Wai Hoe Tham, Ding Shenp Ang, Lakshmi Kanta Bera, Surani Bin Dolmanan, Thirumaleshwara N. Bhat, Vivian K. X. Lin, Sudhiranjan Tripathy, IEEE Trans. Electron. Devices, 63, No. 1, 345-351 ( 2016).
5. X. Chen, K. Liu, Q. C. Quyang, S. K. Jayanarayanan, S. K. Banerjee, IEEE Trans. Electron. Devices, 48, 1975-1980 (2001).
6. Kamal Prakash Pandey, Rakesh Kumar Singh, Anil Kumar, Int. J. Adv. Res. Comput. Commun. Eng., 2, No. 4, 1831-1834 (2013).
7. A. K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. B. Miller, Kr. C. Saraswat, Opt. Lett., 32, No. 14, 2022-2024 (2007).
8. M. Mitsui, K. Arimoto, J. Yamanaka, K Nakagawa, K. Sawano, Y. Shiraki, Appl. Phys. Lett., 89, 192102-05 (2006).
9. J.-S. Rieh, B. Jagannathan, D. R. Greenberg, M. Meghelli, A. Rylyakov, F. Guarin, Zh. Yang, D. C. Ahlgren, G. Freeman, P. Cottrell, D. Harame, IEEE Trans. Microwave Theory Techn., 52, No. 10, 2390-2407 (2004).
10. J. F. Woitok, C. C. G. Visser, T. L. M. Scholtes, Mater. Sci. Eng., B89, 216-220 (2002).
11. H. Rucker, B. Heinemann, Solid State Electron., 44, 783-789 (2000).
12. M. Valden, S. Pak, X. Lai, D. W. Goodman, Catal. Lett., 56, 7-10 (1998).
13. N. Sugiyama, T. Mizuno, S. Takagi, M. Koike, A. Kurobe, Thin Solid Films, 369, No. 3, 199-202 (2000).
14. M. Faheem, A. Kumar, Y. Liang, P. van Der Heide, Mater. Sci. Semiconductor Proc., 44, No. 15, 8-12 (2016).
15. P. F. Fewster, J. Appl. Crystallogr., 25, 714-723 (1992).
16. DIFFRAC Plus, Bruker’s User Manual, DOC-M88-EXX052, 7, No. 2-5 (2009).
17. Yong Seok Suh, M. S. Carroll, R. A. Levy, G. Bisognin, D. de Salvador, M. A. Sahiner, C. A. King, IEEE Trans. Electron. Devices, 52, No. 11, 2416-2421 (2005).
18. Y. Bogumilowicz, J. M. Hartmann, Thin Solid Films, 557, 4-9 (2014).
19. N. R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys., 94, 3883-3889 (2003).
20. N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, W. B. de Boer, Phys. Rev. Lett., 72, 2585-2588 (1994).
Review
For citations:
Faheem M., Zhang Y., Dai X. EFFECT OF BORON DOPING ON HIGH RESOLUTION X-RAY DIFFRACTION METROLOGY. Zhurnal Prikladnoii Spektroskopii. 2018;85(1):173(1)-173(7). (In Russ.)
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