Optical characterization of native defects in 4H-SiC irradiated by 10 MeV electrons with subsequent annealing
Abstract
Low-temperature photoluminescence was employed to investigate the defects of 4H-SiC crystals after high-energy electron irradiation, and the annealing characteristics and dependence of the detecting temperature and irradiation doses were investigated. Results showed that the emission, associated with carbon antisite-vacancy (VCCSi)+ defects was dominant in the electron-irradiated 4H-SiC crystal. With increase in detecting temperature, the emission decreased demonstrating red-shifted, and the full width at halfmaximum broadened, which was attributed to the increase in the concentration of carriers arising from thermal activation at high temperature. The emission intensity was the highest value at an irradiation dose of 7.9×1018 e/cm2, and then began to decrease. This revealed the lattice damage caused by long-term high-energy irradiation, which reduced the intensity of the defect radiation in the spectrum.
Supporting agencies: This study was funded by Fund Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province (No. 20200024), Research Project Supported by Shanxi Scholarship Council of China (No. 2020-129), Shanxi Postgraduate Innovation Project (No. 2020SY413, 2020BY107), and the Key Research and Development Projects of Shanxi Province (No. 201803D121027).
About the Authors
Y. Zhang
School of Materials Science and Engineering at Taiyuan University of Science and Technology
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
K. Wang
School of Materials Science and Engineering at Taiyuan University of Science and Technology
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
H. Wang
School of Materials Science and Engineering at Taiyuan University of Science and Technology
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
Y. Tian
School of Materials Science and Engineering at Taiyuan University of Science and Technology; Shanxi Engineering Vocational College
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
Y. Wang
The Second Research Institute of China Electronic Technology Group
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
J. Li
School of Materials Science and Engineering at Taiyuan University of Science and Technology
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
Y. Chai
School of Materials Science and Engineering at Taiyuan University of Science and Technology
China
Taiyuan, Shanxi 030024.
China
Taiyuan, Shanxi 030024.
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Review
For citations:
Zhang Y., Wang K., Wang H., Tian Y., Wang Y., Li J., Chai Y. Optical characterization of native defects in 4H-SiC irradiated by 10 MeV electrons with subsequent annealing. Zhurnal Prikladnoii Spektroskopii. 2020;87(6):891-896.
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