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Effect of the density of surface V-defects on laser properties of InGaN/GaN heterosctructures with multiple quantum wells grown on silicon substrates
https://doi.org/10.47612/0514-7506-2021-88-6-895-899
Abstract
We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.
About the Authors
A. V. Danilchyk
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
A. V. Nagornyi
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
N. V. Rzheutskyi
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
A. G. Voinilovich
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
V. N. Pavlovskyi
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
E. V. Lutsenko
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Minsk
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Review
For citations:
Danilchyk A.V., Nagornyi A.V., Rzheutskyi N.V., Voinilovich A.G., Pavlovskyi V.N., Lutsenko E.V. Effect of the density of surface V-defects on laser properties of InGaN/GaN heterosctructures with multiple quantum wells grown on silicon substrates. Zhurnal Prikladnoii Spektroskopii. 2021;88(6):895-899. (In Russ.) https://doi.org/10.47612/0514-7506-2021-88-6-895-899
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